Electrical switching of magnetization in the artificial multiferroic CoFeB/BaTiO_3

Electronic, magnetic, chemical, and mechanical phenomena occurring in metal/oxide heterostructures have recently received great attention in view of their exploitation in novel solid state devices. In particular, artificial multiferroics, i.e., layered or composite systems made of a ferromagnetic an...

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Detalles Bibliográficos
Autores: Baldrati, Lorenzo, Rinaldi, Christian, Manuzzi, Alberto, Asa, Marco, Aballe, Lucía, Foerster, Michael, Biskup Zaja, Nevenko, Varela Del Arco, María, Cantoni, Matteo, Bertacco, Riccardo
Tipo de recurso: artículo
Fecha de publicación:2016
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/104692
Acceso en línea:https://hdl.handle.net/20.500.14352/104692
Access Level:acceso abierto
Palabra clave:538.9
537.8
Field
Polarization
Viscosity
Magnetism
Silicon
Films
Física de materiales
Electromagnetismo
2211 Física del Estado Sólido
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oai_identifier_str oai:docta.ucm.es:20.500.14352/104692
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repository_id_str
spelling Electrical switching of magnetization in the artificial multiferroic CoFeB/BaTiO_3Baldrati, LorenzoRinaldi, ChristianManuzzi, AlbertoAsa, MarcoAballe, LucíaFoerster, MichaelBiskup Zaja, NevenkoVarela Del Arco, MaríaCantoni, MatteoBertacco, Riccardo538.9537.8FieldPolarizationViscosityMagnetismSiliconFilmsFísica de materialesElectromagnetismo2211 Física del Estado SólidoElectronic, magnetic, chemical, and mechanical phenomena occurring in metal/oxide heterostructures have recently received great attention in view of their exploitation in novel solid state devices. In particular, artificial multiferroics, i.e., layered or composite systems made of a ferromagnetic and ferroelectric phase, hold potential for achieving the electric control of the magnetization in spintronic devices. In this paper, a novel artificial multiferroic displaying perpendicular magnetic anisotropy is reported: the CoFeB/BaTiO3 bilayer. At room temperature, the CoFeB magnetic coercive field displays a hysteretic behavior, as a function of the voltage across the BaTiO3 layer, with a 60% variation for complete reversal of the ferroelectric BaTiO3 polarization. This is exploited to achieve the electric switching of the magnetization of individual CoFeB electrodes under a uniform magnetic bias field. Upon the local BaTiO3 polarization reversal, the CoFeB electrode jumps from an initial metastable state into the opposite stable magnetization state, with a characteristic switching time determined by magnetic viscosity. The magnetically assisted bipolar electric switching of the magnetization is demonstrated, via voltage pulses compatible with complementary metal-oxide semiconductor (CMOS) electronics, under uniform bias fields as low as 10 Oe.Wiley. Online libraryUniversidad Complutense de Madrid20162016-06-0120162016-06-01journal articlehttp://purl.org/coar/resource_type/c_6501AMhttp://purl.org/coar/version/c_ab4af688f83e57aainfo:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/104692reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/1046922026-06-02T12:44:21Z
dc.title.none.fl_str_mv Electrical switching of magnetization in the artificial multiferroic CoFeB/BaTiO_3
title Electrical switching of magnetization in the artificial multiferroic CoFeB/BaTiO_3
spellingShingle Electrical switching of magnetization in the artificial multiferroic CoFeB/BaTiO_3
Baldrati, Lorenzo
538.9
537.8
Field
Polarization
Viscosity
Magnetism
Silicon
Films
Física de materiales
Electromagnetismo
2211 Física del Estado Sólido
title_short Electrical switching of magnetization in the artificial multiferroic CoFeB/BaTiO_3
title_full Electrical switching of magnetization in the artificial multiferroic CoFeB/BaTiO_3
title_fullStr Electrical switching of magnetization in the artificial multiferroic CoFeB/BaTiO_3
title_full_unstemmed Electrical switching of magnetization in the artificial multiferroic CoFeB/BaTiO_3
title_sort Electrical switching of magnetization in the artificial multiferroic CoFeB/BaTiO_3
dc.creator.none.fl_str_mv Baldrati, Lorenzo
Rinaldi, Christian
Manuzzi, Alberto
Asa, Marco
Aballe, Lucía
Foerster, Michael
Biskup Zaja, Nevenko
Varela Del Arco, María
Cantoni, Matteo
Bertacco, Riccardo
author Baldrati, Lorenzo
author_facet Baldrati, Lorenzo
Rinaldi, Christian
Manuzzi, Alberto
Asa, Marco
Aballe, Lucía
Foerster, Michael
Biskup Zaja, Nevenko
Varela Del Arco, María
Cantoni, Matteo
Bertacco, Riccardo
author_role author
author2 Rinaldi, Christian
Manuzzi, Alberto
Asa, Marco
Aballe, Lucía
Foerster, Michael
Biskup Zaja, Nevenko
Varela Del Arco, María
Cantoni, Matteo
Bertacco, Riccardo
author2_role author
author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 538.9
537.8
Field
Polarization
Viscosity
Magnetism
Silicon
Films
Física de materiales
Electromagnetismo
2211 Física del Estado Sólido
topic 538.9
537.8
Field
Polarization
Viscosity
Magnetism
Silicon
Films
Física de materiales
Electromagnetismo
2211 Física del Estado Sólido
description Electronic, magnetic, chemical, and mechanical phenomena occurring in metal/oxide heterostructures have recently received great attention in view of their exploitation in novel solid state devices. In particular, artificial multiferroics, i.e., layered or composite systems made of a ferromagnetic and ferroelectric phase, hold potential for achieving the electric control of the magnetization in spintronic devices. In this paper, a novel artificial multiferroic displaying perpendicular magnetic anisotropy is reported: the CoFeB/BaTiO3 bilayer. At room temperature, the CoFeB magnetic coercive field displays a hysteretic behavior, as a function of the voltage across the BaTiO3 layer, with a 60% variation for complete reversal of the ferroelectric BaTiO3 polarization. This is exploited to achieve the electric switching of the magnetization of individual CoFeB electrodes under a uniform magnetic bias field. Upon the local BaTiO3 polarization reversal, the CoFeB electrode jumps from an initial metastable state into the opposite stable magnetization state, with a characteristic switching time determined by magnetic viscosity. The magnetically assisted bipolar electric switching of the magnetization is demonstrated, via voltage pulses compatible with complementary metal-oxide semiconductor (CMOS) electronics, under uniform bias fields as low as 10 Oe.
publishDate 2016
dc.date.none.fl_str_mv 2016
2016-06-01
2016
2016-06-01
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
AM
http://purl.org/coar/version/c_ab4af688f83e57aa
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/104692
url https://hdl.handle.net/20.500.14352/104692
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Wiley. Online library
publisher.none.fl_str_mv Wiley. Online library
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,301603

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