Thin silicon films ranging from amorphous to nanocrystalline obtained by Hot-Wire CVD

In this paper, we have presented results on silicon thin films deposited by hot-wire CVD at low substrate temperatures (200 °C). Films ranging from amorphous to nanocrystalline were obtained by varying the filament temperature from 1500 to 1800 °C. A crystalline fraction of 50% was obtained for the...

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Autores: Soler Vilamitjana, David, Fonrodona Turon, Marta, Voz Sánchez, Cristóbal, Bertomeu i Balagueró, Joan, Andreu i Batallé, Jordi
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2001
País:España
Institución:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Repositorio:Recercat. Dipósit de la Recerca de Catalunya
OAI Identifier:oai:recercat.cat:2445/47380
Acceso en línea:https://hdl.handle.net/2445/47380
Access Level:acceso abierto
Palabra clave:Silici
Pel·lícules fines
Nanocristalls
Deposició en fase de vapor
Cèl·lules solars
Silicon
Thin films
Nanocrystals
Vapor-plating
Solar cells
id ES_52c31e85a3d2e40ac3f22fcc2b5e2939
oai_identifier_str oai:recercat.cat:2445/47380
network_acronym_str ES
network_name_str España
repository_id_str
spelling Thin silicon films ranging from amorphous to nanocrystalline obtained by Hot-Wire CVDSoler Vilamitjana, DavidFonrodona Turon, MartaVoz Sánchez, CristóbalBertomeu i Balagueró, JoanAndreu i Batallé, JordiSiliciPel·lícules finesNanocristallsDeposició en fase de vaporCèl·lules solarsSiliconThin filmsNanocrystalsVapor-platingSolar cellsIn this paper, we have presented results on silicon thin films deposited by hot-wire CVD at low substrate temperatures (200 °C). Films ranging from amorphous to nanocrystalline were obtained by varying the filament temperature from 1500 to 1800 °C. A crystalline fraction of 50% was obtained for the sample deposited at 1700 °C. The results obtained seemed to indicate that atomic hydrogen plays a leading role in the obtaining of nanocrystalline silicon. The optoelectronic properties of the amorphous material obtained in these conditions are slightly poorer than the ones observed in device-grade films grown by plasma-enhanced CVD due to a higher hydrogen incorporation (13%).Elsevier B.V.2013201320012013info:eu-repo/semantics/articleinfo:eu-repo/semantics/acceptedVersion4 p.application/pdfapplication/pdfhttps://hdl.handle.net/2445/47380Articles publicats en revistes (Física Aplicada)reponame:Recercat. Dipósit de la Recerca de Catalunyainstname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)InglésVersió postprint del document publicat a: http://dx.doi.org/10.1016/S0040-6090(00)01615-1Thin Solid Films, 2001, vol. 383, num. 1-2, p. 189-191http://dx.doi.org/10.1016/S0040-6090(00)01615-1(c) Elsevier B.V., 2001info:eu-repo/semantics/openAccessoai:recercat.cat:2445/473802026-05-29T05:05:01Z
dc.title.none.fl_str_mv Thin silicon films ranging from amorphous to nanocrystalline obtained by Hot-Wire CVD
title Thin silicon films ranging from amorphous to nanocrystalline obtained by Hot-Wire CVD
spellingShingle Thin silicon films ranging from amorphous to nanocrystalline obtained by Hot-Wire CVD
Soler Vilamitjana, David
Silici
Pel·lícules fines
Nanocristalls
Deposició en fase de vapor
Cèl·lules solars
Silicon
Thin films
Nanocrystals
Vapor-plating
Solar cells
title_short Thin silicon films ranging from amorphous to nanocrystalline obtained by Hot-Wire CVD
title_full Thin silicon films ranging from amorphous to nanocrystalline obtained by Hot-Wire CVD
title_fullStr Thin silicon films ranging from amorphous to nanocrystalline obtained by Hot-Wire CVD
title_full_unstemmed Thin silicon films ranging from amorphous to nanocrystalline obtained by Hot-Wire CVD
title_sort Thin silicon films ranging from amorphous to nanocrystalline obtained by Hot-Wire CVD
dc.creator.none.fl_str_mv Soler Vilamitjana, David
Fonrodona Turon, Marta
Voz Sánchez, Cristóbal
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
author Soler Vilamitjana, David
author_facet Soler Vilamitjana, David
Fonrodona Turon, Marta
Voz Sánchez, Cristóbal
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
author_role author
author2 Fonrodona Turon, Marta
Voz Sánchez, Cristóbal
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
author2_role author
author
author
author
dc.subject.none.fl_str_mv Silici
Pel·lícules fines
Nanocristalls
Deposició en fase de vapor
Cèl·lules solars
Silicon
Thin films
Nanocrystals
Vapor-plating
Solar cells
topic Silici
Pel·lícules fines
Nanocristalls
Deposició en fase de vapor
Cèl·lules solars
Silicon
Thin films
Nanocrystals
Vapor-plating
Solar cells
description In this paper, we have presented results on silicon thin films deposited by hot-wire CVD at low substrate temperatures (200 °C). Films ranging from amorphous to nanocrystalline were obtained by varying the filament temperature from 1500 to 1800 °C. A crystalline fraction of 50% was obtained for the sample deposited at 1700 °C. The results obtained seemed to indicate that atomic hydrogen plays a leading role in the obtaining of nanocrystalline silicon. The optoelectronic properties of the amorphous material obtained in these conditions are slightly poorer than the ones observed in device-grade films grown by plasma-enhanced CVD due to a higher hydrogen incorporation (13%).
publishDate 2001
dc.date.none.fl_str_mv 2001
2013
2013
2013
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/47380
url https://hdl.handle.net/2445/47380
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Versió postprint del document publicat a: http://dx.doi.org/10.1016/S0040-6090(00)01615-1
Thin Solid Films, 2001, vol. 383, num. 1-2, p. 189-191
http://dx.doi.org/10.1016/S0040-6090(00)01615-1
dc.rights.none.fl_str_mv (c) Elsevier B.V., 2001
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) Elsevier B.V., 2001
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 4 p.
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Elsevier B.V.
publisher.none.fl_str_mv Elsevier B.V.
dc.source.none.fl_str_mv Articles publicats en revistes (Física Aplicada)
reponame:Recercat. Dipósit de la Recerca de Catalunya
instname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
instname_str Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
reponame_str Recercat. Dipósit de la Recerca de Catalunya
collection Recercat. Dipósit de la Recerca de Catalunya
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869408070903267328
score 15,81155

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