Characterization of GaSb-based heterostructures by scanning electron microscope cathodoluminescence and scanning tunnelling microscope

The luminescence of GaSb and AlGaSb layers grown on GaAs substrates by metal organic vapour phase epitaxy has been studied by means of cathodoluminescence (CL) rising a scanning electron microscope. CL plane-view analysis reveals a distribution of defects, as misfit dislocations, in some of the stru...

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Detalhes bibliográficos
Autores: StorgardsStorgards, J., Méndez Martín, María Bianchi, Piqueras De Noriega, Francisco Javier, Storgards, M., Dimroth, F., Bett, A.W.
Formato: artículo
Fecha de publicación:2004
País:España
Recursos:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/50965
Acesso em linha:https://hdl.handle.net/20.500.14352/50965
Access Level:acceso abierto
Palavra-chave:538.9
Vapor-Phase Epitaxy
Si(111)2x1 Surface
Doped Gasb
Photoluminescence
Spectroscopy
Growth
Física de materiales
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spelling Characterization of GaSb-based heterostructures by scanning electron microscope cathodoluminescence and scanning tunnelling microscopeStorgardsStorgards, J.Méndez Martín, María BianchiPiqueras De Noriega, Francisco JavierStorgards, M.Dimroth, F.Bett, A.W.538.9Vapor-Phase EpitaxySi(111)2x1 SurfaceDoped GasbPhotoluminescenceSpectroscopyGrowthFísica de materialesThe luminescence of GaSb and AlGaSb layers grown on GaAs substrates by metal organic vapour phase epitaxy has been studied by means of cathodoluminescence (CL) rising a scanning electron microscope. CL plane-view analysis reveals a distribution of defects, as misfit dislocations, in some of the structures. The luminescence bands observed in the GaSb layers are related to near band edge recombination and to an excess of Ga. In the case of AlGaSb/GaSb heterostructure emission bands related to the ternary compound and to donor-acceptor recombination are detected. In addition, with the aid of a scanning tunnelling microscope (STM), local electronic properties, such as conductance and surface energy gap, were studied in sample cross-sections. The results obtained from imaging and spectroscopy modes of STM enabled us to image the single AlGaSb layer.Institute of PhysicsUniversidad Complutense de Madrid20042004-06-2120042004-06-21journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/50965reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/509652026-06-02T12:44:21Z
dc.title.none.fl_str_mv Characterization of GaSb-based heterostructures by scanning electron microscope cathodoluminescence and scanning tunnelling microscope
title Characterization of GaSb-based heterostructures by scanning electron microscope cathodoluminescence and scanning tunnelling microscope
spellingShingle Characterization of GaSb-based heterostructures by scanning electron microscope cathodoluminescence and scanning tunnelling microscope
StorgardsStorgards, J.
538.9
Vapor-Phase Epitaxy
Si(111)2x1 Surface
Doped Gasb
Photoluminescence
Spectroscopy
Growth
Física de materiales
title_short Characterization of GaSb-based heterostructures by scanning electron microscope cathodoluminescence and scanning tunnelling microscope
title_full Characterization of GaSb-based heterostructures by scanning electron microscope cathodoluminescence and scanning tunnelling microscope
title_fullStr Characterization of GaSb-based heterostructures by scanning electron microscope cathodoluminescence and scanning tunnelling microscope
title_full_unstemmed Characterization of GaSb-based heterostructures by scanning electron microscope cathodoluminescence and scanning tunnelling microscope
title_sort Characterization of GaSb-based heterostructures by scanning electron microscope cathodoluminescence and scanning tunnelling microscope
dc.creator.none.fl_str_mv StorgardsStorgards, J.
Méndez Martín, María Bianchi
Piqueras De Noriega, Francisco Javier
Storgards, M.
Dimroth, F.
Bett, A.W.
author StorgardsStorgards, J.
author_facet StorgardsStorgards, J.
Méndez Martín, María Bianchi
Piqueras De Noriega, Francisco Javier
Storgards, M.
Dimroth, F.
Bett, A.W.
author_role author
author2 Méndez Martín, María Bianchi
Piqueras De Noriega, Francisco Javier
Storgards, M.
Dimroth, F.
Bett, A.W.
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 538.9
Vapor-Phase Epitaxy
Si(111)2x1 Surface
Doped Gasb
Photoluminescence
Spectroscopy
Growth
Física de materiales
topic 538.9
Vapor-Phase Epitaxy
Si(111)2x1 Surface
Doped Gasb
Photoluminescence
Spectroscopy
Growth
Física de materiales
description The luminescence of GaSb and AlGaSb layers grown on GaAs substrates by metal organic vapour phase epitaxy has been studied by means of cathodoluminescence (CL) rising a scanning electron microscope. CL plane-view analysis reveals a distribution of defects, as misfit dislocations, in some of the structures. The luminescence bands observed in the GaSb layers are related to near band edge recombination and to an excess of Ga. In the case of AlGaSb/GaSb heterostructure emission bands related to the ternary compound and to donor-acceptor recombination are detected. In addition, with the aid of a scanning tunnelling microscope (STM), local electronic properties, such as conductance and surface energy gap, were studied in sample cross-sections. The results obtained from imaging and spectroscopy modes of STM enabled us to image the single AlGaSb layer.
publishDate 2004
dc.date.none.fl_str_mv 2004
2004-06-21
2004
2004-06-21
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/50965
url https://hdl.handle.net/20.500.14352/50965
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Institute of Physics
publisher.none.fl_str_mv Institute of Physics
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869407975065518080
score 15.300719

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