Directionally solidified Ni doped MgO-MgSZ eutectic composites for thermophotovoltaic devices
Ni-doped MgO-MgSZ eutectic composites were investigated as selective emitters for thermophotovoltaic devices. MgO-MgSZ:Ni eutectic rods were directionally solidified at 25 and 500 mm/h using the laser floating zone technique. Microstructure was strongly dependent on the growth rate, the size of the...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2019 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/176576 |
| Acceso en línea: | http://hdl.handle.net/10261/176576 |
| Access Level: | acceso abierto |
| Palabra clave: | Thermophotovoltaic Nickel doped selective emitters Directionally solidified eutectic ceramics MgO/ZrO2 Mechanical properties |
| Sumario: | Ni-doped MgO-MgSZ eutectic composites were investigated as selective emitters for thermophotovoltaic devices. MgO-MgSZ:Ni eutectic rods were directionally solidified at 25 and 500 mm/h using the laser floating zone technique. Microstructure was strongly dependent on the growth rate, the size of the eutectic phases decreased as the growth rate increased. A hardness of ∼11 GPa and a fracture toughness of ∼1.6 MPa were obtained from indentation techniques, not showing dependence on the growth rate. Flexure strength increased from ∼400 MPa in samples grown at 25 mm/h up to ∼1 GPa for those solidified at 500 mm/h, which was attributed to the decrease of the phase size. Thermal emission of eutectic composites was studied up to 1400 °C. An intense broad emission band centred in 1.5 μm matching with the sensitive region of the GaSb photoconverter was found. The selective emission was ascribed to the de-excitation of the thermally excited Ni2+ ions. |
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