First principle study of V-implantation in highly-doped silicon materials

Bibliographic Details
Authors:	García López de la Osa, Gregorio\|\|\|0000-0002-5875-7554, Casanova Páez, Marcos, Palacios Clemente, Pablo\|\|\|0000-0001-7867-8880, Menéndez Proupin, Eduardo, Wahnón Benarroch, Perla\|\|\|0000-0002-5420-2906
Format:	article
Publication Date:	2017
Country:	España
Institution:	Universidad Politécnica de Madrid
Repository:	Archivo Digital UPM
OAI Identifier:	oai:oa.upm.es:50177
Online Access:	https://oa.upm.es/50177/
Access Level:	Open access
Keyword:	Intermediate band. Sub-bandgap absorption. Infrared.DFT

Description
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