Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots

We present experimental evidence of Sb incorporation inside InAs/GaAs(001) quantum dots exposed to an antimony flux immediately before capping with GaAs. The Sb composition profile inside the nanostructures as measured by cross-sectional scanning tunneling and electron transmission microscopies show...

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Authors: González Taboada, Alfonso, Sánchez, A. M., Beltrán, A. M., Bozkurt, M., Alonso-Álvarez, Diego, Alén, Benito, Rivera de Mena, Antonio, Ripalda, José María, Llorens Montolio, José Manuel, Martín-Sánchez, Javier, González Díez, Yolanda, Ulloa, José M., García Martínez, Jorge Manuel, Molina, Sergio I., Koenraad, P. M.
Format: article
Status:Published version
Publication Date:2010
Country:España
Institution:Consejo Superior de Investigaciones Científicas (CSIC)
Repository:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/32210
Online Access:http://hdl.handle.net/10261/32210
Access Level:Open access
Keyword:Semiconductor nanostructures
Quantum dots
Antimony
Structural characterizations
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spelling Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dotsGonzález Taboada, AlfonsoSánchez, A. M.Beltrán, A. M.Bozkurt, M.Alonso-Álvarez, DiegoAlén, BenitoRivera de Mena, AntonioRipalda, José MaríaLlorens Montolio, José ManuelMartín-Sánchez, JavierGonzález Díez, YolandaUlloa, José M.García Martínez, Jorge ManuelGarcía Martínez, Jorge ManuelMolina, Sergio I.Koenraad, P. M.Semiconductor nanostructuresQuantum dotsAntimonyStructural characterizationsWe present experimental evidence of Sb incorporation inside InAs/GaAs(001) quantum dots exposed to an antimony flux immediately before capping with GaAs. The Sb composition profile inside the nanostructures as measured by cross-sectional scanning tunneling and electron transmission microscopies show two differentiated regions within the quantum dots, with an Sb rich alloy at the tip of the quantum dots. Atomic force microscopy and transmission electron microscopy micrographs show increased quantum-dot height with Sb flux exposure. The evolution of the reflection high-energy electron-diffraction pattern suggests that the increased height is due to changes in the quantum-dot capping process related to the presence of segregated Sb atoms. These structural and compositional changes result in a shift of the room-temperature photoluminescence emission from 1.26 to 1.36 μm accompanied by an order of magnitude increase in the room-temperature quantum-dot luminescence intensity.Support by CAM (Projects No. S-505/ENE-310, No.S-505/ESP/000200, and No. S2009ESP-150), by MEC (Project No. TEC2008-06756-C03-01), Consolider-Ingenio 2010 QOIT (Grant No. CSD2006-00019) and GENESIS (Grant No. CSD2006-00004), and by MICINN (FPI grant of AGT) is acknowledged. A.R. thanks the I3P program of CSIC for financial support. A.M.S. would like to thank the Science City Research Alliance and the HEFCE Strategic Development Fund for funding Support.S/2009ESP-1503/Q&CLightPeer reviewedAmerican Physical SocietyComunidad de MadridMinisterio de Educación y Ciencia (España)Ministerio de Ciencia e Innovación (España)University of BirminghamHigher Education Funding Council for England201120112010info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionhttp://hdl.handle.net/10261/32210reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Ingléshttp://dx.doi.org/10.1103/PhysRevB.82.235316info:eu-repo/semantics/openAccessoai:digital.csic.es:10261/322102026-05-22T06:33:51Z
dc.title.none.fl_str_mv Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots
title Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots
spellingShingle Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots
González Taboada, Alfonso
Semiconductor nanostructures
Quantum dots
Antimony
Structural characterizations
title_short Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots
title_full Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots
title_fullStr Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots
title_full_unstemmed Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots
title_sort Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots
dc.creator.none.fl_str_mv González Taboada, Alfonso
Sánchez, A. M.
Beltrán, A. M.
Bozkurt, M.
Alonso-Álvarez, Diego
Alén, Benito
Rivera de Mena, Antonio
Ripalda, José María
Llorens Montolio, José Manuel
Martín-Sánchez, Javier
González Díez, Yolanda
Ulloa, José M.
García Martínez, Jorge Manuel
García Martínez, Jorge Manuel
Molina, Sergio I.
Koenraad, P. M.
author González Taboada, Alfonso
author_facet González Taboada, Alfonso
Sánchez, A. M.
Beltrán, A. M.
Bozkurt, M.
Alonso-Álvarez, Diego
Alén, Benito
Rivera de Mena, Antonio
Ripalda, José María
Llorens Montolio, José Manuel
Martín-Sánchez, Javier
González Díez, Yolanda
Ulloa, José M.
García Martínez, Jorge Manuel
Molina, Sergio I.
Koenraad, P. M.
author_role author
author2 Sánchez, A. M.
Beltrán, A. M.
Bozkurt, M.
Alonso-Álvarez, Diego
Alén, Benito
Rivera de Mena, Antonio
Ripalda, José María
Llorens Montolio, José Manuel
Martín-Sánchez, Javier
González Díez, Yolanda
Ulloa, José M.
García Martínez, Jorge Manuel
Molina, Sergio I.
Koenraad, P. M.
author2_role author
author
author
author
author
author
author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Comunidad de Madrid
Ministerio de Educación y Ciencia (España)
Ministerio de Ciencia e Innovación (España)
University of Birmingham
Higher Education Funding Council for England
dc.subject.none.fl_str_mv Semiconductor nanostructures
Quantum dots
Antimony
Structural characterizations
topic Semiconductor nanostructures
Quantum dots
Antimony
Structural characterizations
description We present experimental evidence of Sb incorporation inside InAs/GaAs(001) quantum dots exposed to an antimony flux immediately before capping with GaAs. The Sb composition profile inside the nanostructures as measured by cross-sectional scanning tunneling and electron transmission microscopies show two differentiated regions within the quantum dots, with an Sb rich alloy at the tip of the quantum dots. Atomic force microscopy and transmission electron microscopy micrographs show increased quantum-dot height with Sb flux exposure. The evolution of the reflection high-energy electron-diffraction pattern suggests that the increased height is due to changes in the quantum-dot capping process related to the presence of segregated Sb atoms. These structural and compositional changes result in a shift of the room-temperature photoluminescence emission from 1.26 to 1.36 μm accompanied by an order of magnitude increase in the room-temperature quantum-dot luminescence intensity.
publishDate 2010
dc.date.none.fl_str_mv 2010
2011
2011
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Publisher's version
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/32210
url http://hdl.handle.net/10261/32210
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv http://dx.doi.org/10.1103/PhysRevB.82.235316
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv American Physical Society
publisher.none.fl_str_mv American Physical Society
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869407859042680832
score 15,812429

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