Resistance Switching in Transparent Magnetic MgO Films

We have studied the abrupt and hysteretic changes of resistance in MgO-based capacitor devices. The switching behavior is discussed in terms of the formation and rupture of conduction filaments due to the migration of structural defects in the electric field, together with the redox events which aff...

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Detalles Bibliográficos
Autores: Jambois, Olivier, Carreras Seguí, Paz, Antony, Aldrin, Bertomeu i Balagueró, Joan, Martínez Boubeta, José Carlos
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2011
País:España
Institución:Universidad de Barcelona
Repositorio:Dipòsit Digital de la UB
OAI Identifier:oai:diposit.ub.edu:2445/50485
Acceso en línea:https://hdl.handle.net/2445/50485
Access Level:acceso abierto
Palabra clave:Òxid de magnesi
Pel·lícules fines
Espintrònica
Ferromagnetisme
Matèria condensada
Magnesium oxide
Thin films
Spintronics
Ferromagnetism
Condensed matter
id ES_4fc215768dcf5c2435237210ea291dc0
oai_identifier_str oai:diposit.ub.edu:2445/50485
network_acronym_str ES
network_name_str España
repository_id_str
spelling Resistance Switching in Transparent Magnetic MgO FilmsJambois, OlivierCarreras Seguí, PazAntony, AldrinBertomeu i Balagueró, JoanMartínez Boubeta, José CarlosÒxid de magnesiPel·lícules finesEspintrònicaFerromagnetismeMatèria condensadaMagnesium oxideThin filmsSpintronicsFerromagnetismCondensed matterWe have studied the abrupt and hysteretic changes of resistance in MgO-based capacitor devices. The switching behavior is discussed in terms of the formation and rupture of conduction filaments due to the migration of structural defects in the electric field, together with the redox events which affects the mobile carriers. The results presented in this paper suggest that MgO transparent films combining ferromagnetism and multilevel switching characteristics might pave the way for a new method for spintronic multibit data storage.Elsevier Ltd2011info:eu-repo/semantics/articleinfo:eu-repo/semantics/acceptedVersionapplication/pdfhttps://hdl.handle.net/2445/50485Articles publicats en revistes (Física Aplicada)reponame:Dipòsit Digital de la UBinstname:Universidad de BarcelonaInglésVersió postprint del document publicat a: http://dx.doi.org/10.1016/j.ssc.2011.10.009Solid State Communications, 2011, vol. 151, num. 24, p. 1856-1859http://dx.doi.org/10.1016/j.ssc.2011.10.009(c) Elsevier Ltd, 2011info:eu-repo/semantics/openAccessoai:diposit.ub.edu:2445/504852026-05-27T06:46:51Z
dc.title.none.fl_str_mv Resistance Switching in Transparent Magnetic MgO Films
title Resistance Switching in Transparent Magnetic MgO Films
spellingShingle Resistance Switching in Transparent Magnetic MgO Films
Jambois, Olivier
Òxid de magnesi
Pel·lícules fines
Espintrònica
Ferromagnetisme
Matèria condensada
Magnesium oxide
Thin films
Spintronics
Ferromagnetism
Condensed matter
title_short Resistance Switching in Transparent Magnetic MgO Films
title_full Resistance Switching in Transparent Magnetic MgO Films
title_fullStr Resistance Switching in Transparent Magnetic MgO Films
title_full_unstemmed Resistance Switching in Transparent Magnetic MgO Films
title_sort Resistance Switching in Transparent Magnetic MgO Films
dc.creator.none.fl_str_mv Jambois, Olivier
Carreras Seguí, Paz
Antony, Aldrin
Bertomeu i Balagueró, Joan
Martínez Boubeta, José Carlos
author Jambois, Olivier
author_facet Jambois, Olivier
Carreras Seguí, Paz
Antony, Aldrin
Bertomeu i Balagueró, Joan
Martínez Boubeta, José Carlos
author_role author
author2 Carreras Seguí, Paz
Antony, Aldrin
Bertomeu i Balagueró, Joan
Martínez Boubeta, José Carlos
author2_role author
author
author
author
dc.subject.none.fl_str_mv Òxid de magnesi
Pel·lícules fines
Espintrònica
Ferromagnetisme
Matèria condensada
Magnesium oxide
Thin films
Spintronics
Ferromagnetism
Condensed matter
topic Òxid de magnesi
Pel·lícules fines
Espintrònica
Ferromagnetisme
Matèria condensada
Magnesium oxide
Thin films
Spintronics
Ferromagnetism
Condensed matter
description We have studied the abrupt and hysteretic changes of resistance in MgO-based capacitor devices. The switching behavior is discussed in terms of the formation and rupture of conduction filaments due to the migration of structural defects in the electric field, together with the redox events which affects the mobile carriers. The results presented in this paper suggest that MgO transparent films combining ferromagnetism and multilevel switching characteristics might pave the way for a new method for spintronic multibit data storage.
publishDate 2011
dc.date.none.fl_str_mv 2011
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/50485
url https://hdl.handle.net/2445/50485
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.ssc.2011.10.009
Solid State Communications, 2011, vol. 151, num. 24, p. 1856-1859
http://dx.doi.org/10.1016/j.ssc.2011.10.009
dc.rights.none.fl_str_mv (c) Elsevier Ltd, 2011
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) Elsevier Ltd, 2011
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier Ltd
publisher.none.fl_str_mv Elsevier Ltd
dc.source.none.fl_str_mv Articles publicats en revistes (Física Aplicada)
reponame:Dipòsit Digital de la UB
instname:Universidad de Barcelona
instname_str Universidad de Barcelona
reponame_str Dipòsit Digital de la UB
collection Dipòsit Digital de la UB
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,301603

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