Electromagnetic Simulation of the Sub-THz Radiation Coupling to n-channel strained-silicon MODFETs
[EN]We report on a study of the coupling of electromagnetic radiation to a strained-silicon MODFETs used as sub-THz terahertz detector. In particular, the effect of the polarization of the incoming beam as well as the role of the bonding wires on the photoresponse generated were addressed. Two tones...
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2021 |
| País: | España |
| Institución: | Universidad de Salamanca (USAL) |
| Repositorio: | GREDOS. Repositorio Institucional de la Universidad de Salamanca |
| OAI Identifier: | oai:gredos.usal.es:10366/160468 |
| Acceso en línea: | http://hdl.handle.net/10366/160468 |
| Access Level: | acceso embargado |
| Palabra clave: | Electromagnetic simulation Scientific computing Terahertz (THz) THz Radiation Sub-THz Radiation Coupling n-channel strained-silicon MODFETs 1203 Ciencia de los ordenadores 3325 Tecnología de las Telecomunicaciones 3307 Tecnología Electrónica 3304 Tecnología de Los Ordenadores |
| Sumario: | [EN]We report on a study of the coupling of electromagnetic radiation to a strained-silicon MODFETs used as sub-THz terahertz detector. In particular, the effect of the polarization of the incoming beam as well as the role of the bonding wires on the photoresponse generated were addressed. Two tones were considered: 0.15 and 0.30THz. Results show that the device is sensitive to the beam polarization, especially when the beam polarization is perpendicular to the transistor channel under excitation at 0.15THz. We also demonstrated that the bonding wires play a preponderant role in the coupling of the incoming radiation to the channel of the FET under excitation at 0.15THz while they have a minor role at higher frequencies (0.3THz). |
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