Interaction of a mobile {1 1 2} grain boundary with radiation induced defects in a-Fe: Transformation of defects and impact on the shear-coupled grain boundary migration
Mobile grain boundaries (GB) may have specific interactions with radiation-induced defects compared with static GBs. In this paper, we consider the GB-defect interactions for the {1 1 2} GB that performs shear coupled grain boundary migration mediated by its glissile disconnections. The conservative...
| Autores: | , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2020 |
| País: | España |
| Institución: | Universitat Politècnica de Catalunya (UPC) |
| Repositorio: | UPCommons. Portal del coneixement obert de la UPC |
| Idioma: | inglés |
| OAI Identifier: | oai:upcommons.upc.edu:2117/186571 |
| Acceso en línea: | https://hdl.handle.net/2117/186571 https://dx.doi.org/10.1016/j.commatsci.2020.109679 |
| Access Level: | acceso abierto |
| Palabra clave: | Grain boundaries Polycrystalline semiconductors Grain boundary – defect interaction Grain boundary mobility Glissile clusters Sessile clusters MD simulation Policristal·lins Cristal·lització Àrees temàtiques de la UPC::Matemàtiques i estadística::Matemàtica aplicada a les ciències |
| Sumario: | Mobile grain boundaries (GB) may have specific interactions with radiation-induced defects compared with static GBs. In this paper, we consider the GB-defect interactions for the {1 1 2} GB that performs shear coupled grain boundary migration mediated by its glissile disconnections. The conservative motion of this GB facilitates the interaction with radiation-induced defects both, mobile and sessile. While mobile defects interact by diffusing to GBs, sessile defects are approached by moving GBs. Clusters at the GB may either be dragged by disconnections or transformed by the motion of the GB that relocates them into the adjacent grain. In turn, the interaction with point defects and their clusters increases the resolved shear stress necessary for the motion of disconnections and subsequent GB migration. The results obtained are directly applicable to the interaction of radiation induced defects with {1 1 2} deformation twins. |
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