Quasiparticle tunnel electroresistance in superconducting junctions

The term tunnel electroresistance (TER) denotes a fast, non-volatile, reversible resistance switching triggered by voltage pulses in ferroelectric tunnel junctions. It is explained by subtle mechanisms connected to the voltage-induced reversal of the ferroelectric polarization. Here we demonstrate t...

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Autores: Grandal, Javier, León Yebra, Carlos, Varela Del Arco, María, Santamaría Sánchez-Barriga, Jacobo, Rouco Gómez, Víctor, El Hage, R., Sander, A., Seurre, K., Palermo, X., Briatico, J.
Tipo de recurso: artículo
Fecha de publicación:2020
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/6208
Acceso en línea:https://hdl.handle.net/20.500.14352/6208
Access Level:acceso abierto
Palabra clave:538.9
Transition
Polarization
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
id ES_4f41a3baa3da8ce245f360e98da91ff0
oai_identifier_str oai:docta.ucm.es:20.500.14352/6208
network_acronym_str ES
network_name_str España
repository_id_str
spelling Quasiparticle tunnel electroresistance in superconducting junctionsGrandal, JavierLeón Yebra, CarlosVarela Del Arco, MaríaSantamaría Sánchez-Barriga, JacoboRouco Gómez, VíctorEl Hage, R.Sander, A.Seurre, K.Palermo, X.Briatico, J.538.9TransitionPolarizationFísica de materialesFísica del estado sólido2211 Física del Estado SólidoThe term tunnel electroresistance (TER) denotes a fast, non-volatile, reversible resistance switching triggered by voltage pulses in ferroelectric tunnel junctions. It is explained by subtle mechanisms connected to the voltage-induced reversal of the ferroelectric polarization. Here we demonstrate that effects functionally indistinguishable from the TER can be produced in a simpler junction scheme-a direct contact between a metal and an oxide-through a different mechanism: a reversible redox reaction that modifies the oxide's ground-state. This is shown in junctions based on a cuprate superconductor, whose ground-state is sensitive to the oxygen stoichiometry and can be tracked in operando via changes in the conductance spectra. Furthermore, we find that electrochemistry is the governing mechanism even if a ferroelectric is placed between the metal and the oxide. Finally, we extend the concept of electroresistance to the tunnelling of superconducting quasiparticles, for which the switching effects are much stronger than for normal electrons. Besides providing crucial understanding, our results provide a basis for non-volatile Josephson memory devices. The non-volatile switching of tunnel electroresistance in ferroelectric junctions provides the basis for memory and neuromorphic computing devices. Rouco et al. show tunnel electroresistance in superconductor-based junctions that arises from a redox rather than ferroelectric mechanism and is enhanced by superconductivity.Nature Publishing groupUniversidad Complutense de Madrid20202020-01-3120202020-01-31journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/6208reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2Atribución 3.0 Españahttps://creativecommons.org/licenses/by/3.0/es/info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/62082026-06-02T12:44:21Z
dc.title.none.fl_str_mv Quasiparticle tunnel electroresistance in superconducting junctions
title Quasiparticle tunnel electroresistance in superconducting junctions
spellingShingle Quasiparticle tunnel electroresistance in superconducting junctions
Grandal, Javier
538.9
Transition
Polarization
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
title_short Quasiparticle tunnel electroresistance in superconducting junctions
title_full Quasiparticle tunnel electroresistance in superconducting junctions
title_fullStr Quasiparticle tunnel electroresistance in superconducting junctions
title_full_unstemmed Quasiparticle tunnel electroresistance in superconducting junctions
title_sort Quasiparticle tunnel electroresistance in superconducting junctions
dc.creator.none.fl_str_mv Grandal, Javier
León Yebra, Carlos
Varela Del Arco, María
Santamaría Sánchez-Barriga, Jacobo
Rouco Gómez, Víctor
El Hage, R.
Sander, A.
Seurre, K.
Palermo, X.
Briatico, J.
author Grandal, Javier
author_facet Grandal, Javier
León Yebra, Carlos
Varela Del Arco, María
Santamaría Sánchez-Barriga, Jacobo
Rouco Gómez, Víctor
El Hage, R.
Sander, A.
Seurre, K.
Palermo, X.
Briatico, J.
author_role author
author2 León Yebra, Carlos
Varela Del Arco, María
Santamaría Sánchez-Barriga, Jacobo
Rouco Gómez, Víctor
El Hage, R.
Sander, A.
Seurre, K.
Palermo, X.
Briatico, J.
author2_role author
author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 538.9
Transition
Polarization
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
topic 538.9
Transition
Polarization
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
description The term tunnel electroresistance (TER) denotes a fast, non-volatile, reversible resistance switching triggered by voltage pulses in ferroelectric tunnel junctions. It is explained by subtle mechanisms connected to the voltage-induced reversal of the ferroelectric polarization. Here we demonstrate that effects functionally indistinguishable from the TER can be produced in a simpler junction scheme-a direct contact between a metal and an oxide-through a different mechanism: a reversible redox reaction that modifies the oxide's ground-state. This is shown in junctions based on a cuprate superconductor, whose ground-state is sensitive to the oxygen stoichiometry and can be tracked in operando via changes in the conductance spectra. Furthermore, we find that electrochemistry is the governing mechanism even if a ferroelectric is placed between the metal and the oxide. Finally, we extend the concept of electroresistance to the tunnelling of superconducting quasiparticles, for which the switching effects are much stronger than for normal electrons. Besides providing crucial understanding, our results provide a basis for non-volatile Josephson memory devices. The non-volatile switching of tunnel electroresistance in ferroelectric junctions provides the basis for memory and neuromorphic computing devices. Rouco et al. show tunnel electroresistance in superconductor-based junctions that arises from a redox rather than ferroelectric mechanism and is enhanced by superconductivity.
publishDate 2020
dc.date.none.fl_str_mv 2020
2020-01-31
2020
2020-01-31
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/6208
url https://hdl.handle.net/20.500.14352/6208
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
Atribución 3.0 España
https://creativecommons.org/licenses/by/3.0/es/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
Atribución 3.0 España
https://creativecommons.org/licenses/by/3.0/es/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Nature Publishing group
publisher.none.fl_str_mv Nature Publishing group
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869407807975981056
score 15,298079

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