Ultralow 1/f noise in epigraphene devices

We report the lowest recorded levels of 1/ f noise for graphene-based devices, at the level of S V / V 2 = S I / I 2 = 4.4 × 10 − 16 (1/Hz), measured at f = 10 Hz ( S V / V 2 = S I / I 2 < 10 − 16 1/Hz for f > 100 Hz) in large-area epitaxial graphene on silicon carbide (epigraphene) Hall senso...

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Detalhes bibliográficos
Autores: Shetty, N., Chianese, Federico, He, Hans, Huhtasaari, J., Ghasemi, Shima, Moth-Poulsen, Kasper, Kubatkin, Sergey, Bauch, Thilo, Lara-Avila, Samuel
Formato: artículo
Estado:Versión publicada
Fecha de publicación:2024
País:España
Recursos:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/361061
Acesso em linha:http://hdl.handle.net/10261/361061
https://api.elsevier.com/content/abstract/scopus_id/85186477120
Access Level:acceso abierto
Palavra-chave:Hall effect
Sensors
Electronic noise
Signal-to-noise ratio
id ES_4db332abfb99f0d6fa653fd3015cfeef
oai_identifier_str oai:digital.csic.es:10261/361061
network_acronym_str ES
network_name_str España
repository_id_str
spelling Ultralow 1/f noise in epigraphene devicesShetty, N.Chianese, FedericoHe, HansHuhtasaari, J.Ghasemi, ShimaMoth-Poulsen, KasperKubatkin, SergeyBauch, ThiloLara-Avila, SamuelHall effectSensorsElectronic noiseSignal-to-noise ratioWe report the lowest recorded levels of 1/ f noise for graphene-based devices, at the level of S V / V 2 = S I / I 2 = 4.4 × 10 − 16 (1/Hz), measured at f = 10 Hz ( S V / V 2 = S I / I 2 < 10 − 16 1/Hz for f > 100 Hz) in large-area epitaxial graphene on silicon carbide (epigraphene) Hall sensors. This performance is made possible through the combination of high material quality, low contact resistance achieved by edge contact fabrication process, homogeneous doping, and stable passivation of the graphene layer. Our study explores the nature of 1/ f noise as a function of carrier density and device geometry and includes data from Hall sensors with device area range spanning over six orders of magnitude, with characteristic device length ranging from L = 1 μm to 1 mm. In optimized graphene Hall sensors, we demonstrate arrays to be a viable route to improve further the magnetic field detection: a simple parallel connection of two devices displays record-high magnetic field sensitivity at room temperature, with minimum detectable magnetic field levels down to B min = 9.5 nT/√Hz. The remarkable low levels of 1/ f noise observed in epigraphene devices hold immense capacity for the design and fabrication of scalable epigraphene-based sensors with exceptional performance.This work was jointly supported by the Swedish Foundation for Strategic Research (SSF) (Nos. GMT14-0077, RMA15-0024, and FFL21-0129), Chalmers Area of Advance Nano, Chalmers Area of Advance Energy, Chalmers Area of Advanced material, 2D TECH VINNOVA competence Center (Ref. 2019-00068), VINNOVA (Ref. 2020-04311 and 2021-04177), Marie Sklodowska-Curie grant QUESTech No. 766025, Knut and Alice Wallenberg Foundation (2019.0140), and the Swedish Research Council VR (Contract Nos. 2021-05252 and 2018-04962). This work was performed in part at Myfab Chalmers and Chalmers Materials Analysis Laboratory (CMAL).With funding from the Spanish government through the ‘Severo Ochoa Centre of Excellence’ accreditation (CEX2019-000917-S).Peer reviewedAmerican Institute of PhysicsSwedish Foundation for Strategic ResearchChalmers University of TechnologyVINNOVA (Sweden)Knut and Alice Wallenberg FoundationSwedish Research CouncilAgencia Estatal de Investigación (España)Shetty, N. [0000-0002-1230-7048]Chianese, Federico [0000-0001-6895-2137]He, Hans [0000-0003-1962-5572]Huhtasaari, J. [0000-0003-1653-9476]Ghasemi, Shima [0000-0001-7915-1546]Moth-Poulsen, Kasper [0000-0003-4018-4927]Kubatkin, Sergey [0000-0001-8551-9247]Bauch, Thilo [0000-0002-8918-4293]Lara-Avila, Samuel [0000-0002-8331-718X]Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202420242024info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionhttp://hdl.handle.net/10261/361061https://api.elsevier.com/content/abstract/scopus_id/85186477120reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/AEI/Plan Estatal de investigación Científica y Técnica y de Innovación 2017-2020/CEX2019-000917-SApplied Physics Lettershttp://doi.org/10.1063/5.0185890Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/3610612026-05-22T06:33:51Z
dc.title.none.fl_str_mv Ultralow 1/f noise in epigraphene devices
title Ultralow 1/f noise in epigraphene devices
spellingShingle Ultralow 1/f noise in epigraphene devices
Shetty, N.
Hall effect
Sensors
Electronic noise
Signal-to-noise ratio
title_short Ultralow 1/f noise in epigraphene devices
title_full Ultralow 1/f noise in epigraphene devices
title_fullStr Ultralow 1/f noise in epigraphene devices
title_full_unstemmed Ultralow 1/f noise in epigraphene devices
title_sort Ultralow 1/f noise in epigraphene devices
dc.creator.none.fl_str_mv Shetty, N.
Chianese, Federico
He, Hans
Huhtasaari, J.
Ghasemi, Shima
Moth-Poulsen, Kasper
Kubatkin, Sergey
Bauch, Thilo
Lara-Avila, Samuel
author Shetty, N.
author_facet Shetty, N.
Chianese, Federico
He, Hans
Huhtasaari, J.
Ghasemi, Shima
Moth-Poulsen, Kasper
Kubatkin, Sergey
Bauch, Thilo
Lara-Avila, Samuel
author_role author
author2 Chianese, Federico
He, Hans
Huhtasaari, J.
Ghasemi, Shima
Moth-Poulsen, Kasper
Kubatkin, Sergey
Bauch, Thilo
Lara-Avila, Samuel
author2_role author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Swedish Foundation for Strategic Research
Chalmers University of Technology
VINNOVA (Sweden)
Knut and Alice Wallenberg Foundation
Swedish Research Council
Agencia Estatal de Investigación (España)
Shetty, N. [0000-0002-1230-7048]
Chianese, Federico [0000-0001-6895-2137]
He, Hans [0000-0003-1962-5572]
Huhtasaari, J. [0000-0003-1653-9476]
Ghasemi, Shima [0000-0001-7915-1546]
Moth-Poulsen, Kasper [0000-0003-4018-4927]
Kubatkin, Sergey [0000-0001-8551-9247]
Bauch, Thilo [0000-0002-8918-4293]
Lara-Avila, Samuel [0000-0002-8331-718X]
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Hall effect
Sensors
Electronic noise
Signal-to-noise ratio
topic Hall effect
Sensors
Electronic noise
Signal-to-noise ratio
description We report the lowest recorded levels of 1/ f noise for graphene-based devices, at the level of S V / V 2 = S I / I 2 = 4.4 × 10 − 16 (1/Hz), measured at f = 10 Hz ( S V / V 2 = S I / I 2 < 10 − 16 1/Hz for f > 100 Hz) in large-area epitaxial graphene on silicon carbide (epigraphene) Hall sensors. This performance is made possible through the combination of high material quality, low contact resistance achieved by edge contact fabrication process, homogeneous doping, and stable passivation of the graphene layer. Our study explores the nature of 1/ f noise as a function of carrier density and device geometry and includes data from Hall sensors with device area range spanning over six orders of magnitude, with characteristic device length ranging from L = 1 μm to 1 mm. In optimized graphene Hall sensors, we demonstrate arrays to be a viable route to improve further the magnetic field detection: a simple parallel connection of two devices displays record-high magnetic field sensitivity at room temperature, with minimum detectable magnetic field levels down to B min = 9.5 nT/√Hz. The remarkable low levels of 1/ f noise observed in epigraphene devices hold immense capacity for the design and fabrication of scalable epigraphene-based sensors with exceptional performance.
publishDate 2024
dc.date.none.fl_str_mv 2024
2024
2024
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Publisher's version
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/361061
https://api.elsevier.com/content/abstract/scopus_id/85186477120
url http://hdl.handle.net/10261/361061
https://api.elsevier.com/content/abstract/scopus_id/85186477120
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv #PLACEHOLDER_PARENT_METADATA_VALUE#
info:eu-repo/grantAgreement/AEI/Plan Estatal de investigación Científica y Técnica y de Innovación 2017-2020/CEX2019-000917-S
Applied Physics Letters
http://doi.org/10.1063/5.0185890
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869407709247307776
score 15,811543

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