Study of pinholes and nanotubes in AlInGaN films by cathodoluminescence and atomic force microscopy
Cathodoluminescence (CL) in the scanning electron microscope and atomic force microscopy (AFM) have been used to study the formation of pinholes in tensile and compressively strained AlInGaN films grown on Al2O3 substrates by plasma-induced molecular beam epitaxy. Nanotubes, pits, and V-shaped pinho...
| Authors: | , , , , |
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| Format: | article |
| Publication Date: | 2004 |
| Country: | España |
| Institution: | Universidad Complutense de Madrid (UCM) |
| Repository: | Docta Complutense |
| Language: | English |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/50848 |
| Online Access: | https://hdl.handle.net/20.500.14352/50848 |
| Access Level: | Open access |
| Keyword: | 538.9 Multiple-Quantum Wells Formation Mechanism Structural Defects Band-Gap Heterostructures Luminescence Growth Alloys Dislocations Strain Física de materiales |
| id |
ES_4da2236dd70dd39267645ee9fa05aa0e |
|---|---|
| oai_identifier_str |
oai:docta.ucm.es:20.500.14352/50848 |
| network_acronym_str |
ES |
| network_name_str |
España |
| repository_id_str |
|
| spelling |
Study of pinholes and nanotubes in AlInGaN films by cathodoluminescence and atomic force microscopyHerrera, M.Cremades Rodríguez, Ana IsabelPiqueras De Noriega, Francisco JavierStutzmann, M.Ambacher, O.538.9Multiple-Quantum WellsFormation MechanismStructural DefectsBand-GapHeterostructuresLuminescenceGrowthAlloysDislocationsStrainFísica de materialesCathodoluminescence (CL) in the scanning electron microscope and atomic force microscopy (AFM) have been used to study the formation of pinholes in tensile and compressively strained AlInGaN films grown on Al2O3 substrates by plasma-induced molecular beam epitaxy. Nanotubes, pits, and V-shaped pinholes are observed in a tensile strained sample. CL images show an enhanced emission around the pits and a lower intensity at the V-shaped pinholes. Rounded pinholes appear in compressively strained samples in island-like regions with higher In concentration. The grain structure near the pinholes is resolved by AFM. (C) 2004 American Institute of Physics.American Institute of PhysicsUniversidad Complutense de Madrid20042004-11-0120042004-11-01journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/50848reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/508482026-06-02T12:44:21Z |
| dc.title.none.fl_str_mv |
Study of pinholes and nanotubes in AlInGaN films by cathodoluminescence and atomic force microscopy |
| title |
Study of pinholes and nanotubes in AlInGaN films by cathodoluminescence and atomic force microscopy |
| spellingShingle |
Study of pinholes and nanotubes in AlInGaN films by cathodoluminescence and atomic force microscopy Herrera, M. 538.9 Multiple-Quantum Wells Formation Mechanism Structural Defects Band-Gap Heterostructures Luminescence Growth Alloys Dislocations Strain Física de materiales |
| title_short |
Study of pinholes and nanotubes in AlInGaN films by cathodoluminescence and atomic force microscopy |
| title_full |
Study of pinholes and nanotubes in AlInGaN films by cathodoluminescence and atomic force microscopy |
| title_fullStr |
Study of pinholes and nanotubes in AlInGaN films by cathodoluminescence and atomic force microscopy |
| title_full_unstemmed |
Study of pinholes and nanotubes in AlInGaN films by cathodoluminescence and atomic force microscopy |
| title_sort |
Study of pinholes and nanotubes in AlInGaN films by cathodoluminescence and atomic force microscopy |
| dc.creator.none.fl_str_mv |
Herrera, M. Cremades Rodríguez, Ana Isabel Piqueras De Noriega, Francisco Javier Stutzmann, M. Ambacher, O. |
| author |
Herrera, M. |
| author_facet |
Herrera, M. Cremades Rodríguez, Ana Isabel Piqueras De Noriega, Francisco Javier Stutzmann, M. Ambacher, O. |
| author_role |
author |
| author2 |
Cremades Rodríguez, Ana Isabel Piqueras De Noriega, Francisco Javier Stutzmann, M. Ambacher, O. |
| author2_role |
author author author author |
| dc.contributor.none.fl_str_mv |
Universidad Complutense de Madrid |
| dc.subject.none.fl_str_mv |
538.9 Multiple-Quantum Wells Formation Mechanism Structural Defects Band-Gap Heterostructures Luminescence Growth Alloys Dislocations Strain Física de materiales |
| topic |
538.9 Multiple-Quantum Wells Formation Mechanism Structural Defects Band-Gap Heterostructures Luminescence Growth Alloys Dislocations Strain Física de materiales |
| description |
Cathodoluminescence (CL) in the scanning electron microscope and atomic force microscopy (AFM) have been used to study the formation of pinholes in tensile and compressively strained AlInGaN films grown on Al2O3 substrates by plasma-induced molecular beam epitaxy. Nanotubes, pits, and V-shaped pinholes are observed in a tensile strained sample. CL images show an enhanced emission around the pits and a lower intensity at the V-shaped pinholes. Rounded pinholes appear in compressively strained samples in island-like regions with higher In concentration. The grain structure near the pinholes is resolved by AFM. (C) 2004 American Institute of Physics. |
| publishDate |
2004 |
| dc.date.none.fl_str_mv |
2004 2004-11-01 2004 2004-11-01 |
| dc.type.none.fl_str_mv |
journal article http://purl.org/coar/resource_type/c_6501 |
| dc.type.openaire.fl_str_mv |
info:eu-repo/semantics/article |
| format |
article |
| dc.identifier.none.fl_str_mv |
https://hdl.handle.net/20.500.14352/50848 |
| url |
https://hdl.handle.net/20.500.14352/50848 |
| dc.language.none.fl_str_mv |
Inglés eng |
| language_invalid_str_mv |
Inglés |
| language |
eng |
| dc.rights.none.fl_str_mv |
open access http://purl.org/coar/access_right/c_abf2 |
| dc.rights.openaire.fl_str_mv |
info:eu-repo/semantics/openAccess |
| rights_invalid_str_mv |
open access http://purl.org/coar/access_right/c_abf2 |
| eu_rights_str_mv |
openAccess |
| dc.format.none.fl_str_mv |
application/pdf |
| dc.publisher.none.fl_str_mv |
American Institute of Physics |
| publisher.none.fl_str_mv |
American Institute of Physics |
| dc.source.none.fl_str_mv |
reponame:Docta Complutense instname:Universidad Complutense de Madrid (UCM) |
| instname_str |
Universidad Complutense de Madrid (UCM) |
| reponame_str |
Docta Complutense |
| collection |
Docta Complutense |
| repository.name.fl_str_mv |
|
| repository.mail.fl_str_mv |
|
| _version_ |
1869407704627281920 |
| score |
15,198674 |