Cita APA

Mistroni, A., Jia, R., Dorai Swamy Reddy, K., Reichmann, F., Wenger, C., Perez, E., . . . Dueñas Carazo, S. (2024). Forming and Resistive Switching of HfO₂-Based RRAM Devices at Cryogenic Temperature.

Citación estilo Chicago

Mistroni, Alberto, Ruolan Jia, Keerthi Dorai Swamy Reddy, Felix Reichmann, Christian Wenger, Eduardo Perez, María Helena Castán Lanaspa, Emilio Perez-Bosch Quesada, y Salvador Dueñas Carazo. Forming and Resistive Switching of HfO₂-Based RRAM Devices At Cryogenic Temperature. 2024.

Cita MLA

Mistroni, Alberto, et al. Forming and Resistive Switching of HfO₂-Based RRAM Devices At Cryogenic Temperature. 2024.