Growth of CrNx films by DC reactive magnetron sputtering at constant N2/Ar gas flow

Chromium nitride coatings have been deposited on silicon by magnetron sputtering in an Ar + N2 atmosphere at different bias substrate voltages. The poisoning effect has been studied monitoring the discharge voltage and total pressure. The chemical composition and crystalline structure have been anal...

Descripción completa

Detalles Bibliográficos
Autores: Forniés, E., Escobar-Galindo, Ramón, Sánchez, O., Albella Martín, José María
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2006
País:España
Institución:Universidad de Sevilla (US)
Repositorio:idUS. Depósito de Investigación de la Universidad de Sevilla
OAI Identifier:oai:idus.us.es:11441/147595
Acceso en línea:https://hdl.handle.net/11441/147595
https://doi.org/10.1016/j.surfcoat.2005.09.020
Access Level:acceso abierto
Palabra clave:CrN
Sputtering
Hardness
Bias
GDOES
Pin-on-disk
id ES_4c2edb1f54911de1286f9b032b0c5e8a
oai_identifier_str oai:idus.us.es:11441/147595
network_acronym_str ES
network_name_str España
repository_id_str
spelling Growth of CrNx films by DC reactive magnetron sputtering at constant N2/Ar gas flowForniés, E.Escobar-Galindo, RamónSánchez, O.Albella Martín, José MaríaCrNSputteringHardnessBiasGDOESPin-on-diskChromium nitride coatings have been deposited on silicon by magnetron sputtering in an Ar + N2 atmosphere at different bias substrate voltages. The poisoning effect has been studied monitoring the discharge voltage and total pressure. The chemical composition and crystalline structure have been analysed by Glow Discharge Optical Emission Spectroscopy (GDOES) and X-ray Diffraction (XRD), respectively. Changing simultaneously the relative N2 (fN2) and Ar (fAr) flow rates, while keeping constant the total gas flow (at 11sccm), different crystalline phases are observed. At low N2 concentrations, fN2 < 2%, pure Cr is detected. At increasing N2 flow rates (5% < fN2 < 40%) the following sequence of phases is found: [Cr + N], [Cr + CrNx] and [Cr + CrN]. Finally, in the range 50% < fN2 < 100% only the hexagonal phase Cr2N is obtained. Scanning electron microscopy (SEM) has been used to obtain the microstructure, revealing that it changes from columnar to granular when the substrate bias varies in the range from + 20 V to − 150 V. Nanoindentation and pin-on-disk experiments have been also carried out to correlate the tribological behaviour of the coatings with the observed crystalline phases.ScienceDirectFísica Aplicada I2006info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfapplication/pdfhttps://hdl.handle.net/11441/147595https://doi.org/10.1016/j.surfcoat.2005.09.020reponame:idUS. Depósito de Investigación de la Universidad de Sevillainstname:Universidad de Sevilla (US)InglésSurface and Coatings Technology, 200 (20-21), 6047-6053.https://www.sciencedirect.com/science/article/pii/S0257897205010571info:eu-repo/semantics/openAccessoai:idus.us.es:11441/1475952026-06-17T12:51:07Z
dc.title.none.fl_str_mv Growth of CrNx films by DC reactive magnetron sputtering at constant N2/Ar gas flow
title Growth of CrNx films by DC reactive magnetron sputtering at constant N2/Ar gas flow
spellingShingle Growth of CrNx films by DC reactive magnetron sputtering at constant N2/Ar gas flow
Forniés, E.
CrN
Sputtering
Hardness
Bias
GDOES
Pin-on-disk
title_short Growth of CrNx films by DC reactive magnetron sputtering at constant N2/Ar gas flow
title_full Growth of CrNx films by DC reactive magnetron sputtering at constant N2/Ar gas flow
title_fullStr Growth of CrNx films by DC reactive magnetron sputtering at constant N2/Ar gas flow
title_full_unstemmed Growth of CrNx films by DC reactive magnetron sputtering at constant N2/Ar gas flow
title_sort Growth of CrNx films by DC reactive magnetron sputtering at constant N2/Ar gas flow
dc.creator.none.fl_str_mv Forniés, E.
Escobar-Galindo, Ramón
Sánchez, O.
Albella Martín, José María
author Forniés, E.
author_facet Forniés, E.
Escobar-Galindo, Ramón
Sánchez, O.
Albella Martín, José María
author_role author
author2 Escobar-Galindo, Ramón
Sánchez, O.
Albella Martín, José María
author2_role author
author
author
dc.contributor.none.fl_str_mv Física Aplicada I
dc.subject.none.fl_str_mv CrN
Sputtering
Hardness
Bias
GDOES
Pin-on-disk
topic CrN
Sputtering
Hardness
Bias
GDOES
Pin-on-disk
description Chromium nitride coatings have been deposited on silicon by magnetron sputtering in an Ar + N2 atmosphere at different bias substrate voltages. The poisoning effect has been studied monitoring the discharge voltage and total pressure. The chemical composition and crystalline structure have been analysed by Glow Discharge Optical Emission Spectroscopy (GDOES) and X-ray Diffraction (XRD), respectively. Changing simultaneously the relative N2 (fN2) and Ar (fAr) flow rates, while keeping constant the total gas flow (at 11sccm), different crystalline phases are observed. At low N2 concentrations, fN2 < 2%, pure Cr is detected. At increasing N2 flow rates (5% < fN2 < 40%) the following sequence of phases is found: [Cr + N], [Cr + CrNx] and [Cr + CrN]. Finally, in the range 50% < fN2 < 100% only the hexagonal phase Cr2N is obtained. Scanning electron microscopy (SEM) has been used to obtain the microstructure, revealing that it changes from columnar to granular when the substrate bias varies in the range from + 20 V to − 150 V. Nanoindentation and pin-on-disk experiments have been also carried out to correlate the tribological behaviour of the coatings with the observed crystalline phases.
publishDate 2006
dc.date.none.fl_str_mv 2006
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/11441/147595
https://doi.org/10.1016/j.surfcoat.2005.09.020
url https://hdl.handle.net/11441/147595
https://doi.org/10.1016/j.surfcoat.2005.09.020
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Surface and Coatings Technology, 200 (20-21), 6047-6053.
https://www.sciencedirect.com/science/article/pii/S0257897205010571
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv ScienceDirect
publisher.none.fl_str_mv ScienceDirect
dc.source.none.fl_str_mv reponame:idUS. Depósito de Investigación de la Universidad de Sevilla
instname:Universidad de Sevilla (US)
instname_str Universidad de Sevilla (US)
reponame_str idUS. Depósito de Investigación de la Universidad de Sevilla
collection idUS. Depósito de Investigación de la Universidad de Sevilla
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869407610838450176
score 15,300719

Similares en LA Referencia