Unveiling the Optical Properties of InP/InGaP Nanowires using Spectroscopic Characterization Techniques
Semiconductor nanowires are promising materials for the next generation of tandem solar cells. Its dimension allows one to combine a large variety of materials not allowed in planar solar cells because of the large lattice mismatch. Nanowires have also shown great potential in electrical, biomedical...
| Autor: | |
|---|---|
| Tipo de recurso: | tesis de maestría |
| Fecha de publicación: | 2022 |
| País: | España |
| Institución: | Universidad de Valladolid |
| Repositorio: | UVaDOC. Repositorio Documental de la Universidad de Valladolid |
| OAI Identifier: | oai:uvadoc.uva.es:10324/57894 |
| Acceso en línea: | https://uvadoc.uva.es/handle/10324/57894 |
| Access Level: | acceso abierto |
| Palabra clave: | Raman Photoluminescence Axiallyhetero-structured nanowires(NWs) |
| Sumario: | Semiconductor nanowires are promising materials for the next generation of tandem solar cells. Its dimension allows one to combine a large variety of materials not allowed in planar solar cells because of the large lattice mismatch. Nanowires have also shown great potential in electrical, biomedical, photonics, and other applications. Different configurations, doping, and concentrations have been used. Therefore, understanding the nanowire properties is crucial to grow nanowires for different applications. In that context, optical techniques are very powerful non-invasive tools for charac- terizing semiconductor nanowires. In this work, we have characterized axially hetero-structured InP/InGaP nanowires with micro-Raman spectroscopy, micro-photoluminescence, tip-enhanced Raman spectroscopy, tip-enhanced photoluminescence, and energy-dispersive X-ray analysis. We found peculiar optical phenomena along the nanowire, which consists of two p n junctions made of InP and InGaP, respectively, axially bridged by a n+-InP/p+-InGaP tunnel diode. In particular, a local resonance at the tunnel junction is accompanied by the breakdown of the Raman selection rules. Furthermore, plasmon damped mode was observed in the heavily p-type doped side of the tunnel junction. Photoluminescence measurements allowed to detect the presence of a parasitic InGaP layer grown laterally at the bottom of the nanowire. |
|---|