Surface enhanced Raman spectroscopy by titanium nitride non-continuous thin films
Reactive ultra-high vacuum sputtering of titanium nitride (TiN) films on silicon substrates produces, under certain growth conditions, a non-continuous thin film with a distribution of holes that has an optical extinction coefficient comparable to that of gold nanostructures. The full Raman spectra,...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2013 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/414092 |
| Acceso en línea: | http://hdl.handle.net/10261/414092 https://api.elsevier.com/content/abstract/scopus_id/84875461207 |
| Access Level: | acceso abierto |
| Palabra clave: | Sputtering Surface enhanced Raman spectroscopy Thin films Titanium nitride |
| Sumario: | Reactive ultra-high vacuum sputtering of titanium nitride (TiN) films on silicon substrates produces, under certain growth conditions, a non-continuous thin film with a distribution of holes that has an optical extinction coefficient comparable to that of gold nanostructures. The full Raman spectra, acquired on different points of the TiN thin film and in comparison to bare silicon substrates, show surface enhanced Raman spectroscopy (SERS) of 40%. TiN, due to the well-known chemical and physical stability in different harsh environments, opens different possibilities in the development of SERS active template. © 2013 Elsevier B.V. |
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