Reconstruction of the SiO2 structure damaged by low-energy Ar-implanted ions

The damage created in SiO2 layers by low-energy Ar ions (130 keV) and the reconstruction of the structure after various annealing steps have been characterized as a function of the implantation dose. Quantitative determinations of the damage produced have been performed from infrared spectroscopy. W...

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Autores: Garrido Fernández, Blas, Samitier i Martí, Josep, Bota Ferragut, Sebastián Antonio, Moreno, J. A., Montserrat i Martí, Josep, Morante i Lleonart, Joan Ramon
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:1984
País:España
Institución:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Repositorio:Recercat. Dipósit de la Recerca de Catalunya
OAI Identifier:oai:recercat.cat:2445/24747
Acceso en línea:https://hdl.handle.net/2445/24747
Access Level:acceso abierto
Palabra clave:Implantació d'ions
Espectroscòpia
Spectrum analysis
Ion implantation
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spelling Reconstruction of the SiO2 structure damaged by low-energy Ar-implanted ionsGarrido Fernández, BlasSamitier i Martí, JosepBota Ferragut, Sebastián AntonioMoreno, J. A.Montserrat i Martí, JosepMorante i Lleonart, Joan RamonImplantació d'ionsEspectroscòpiaSpectrum analysisIon implantationThe damage created in SiO2 layers by low-energy Ar ions (130 keV) and the reconstruction of the structure after various annealing steps have been characterized as a function of the implantation dose. Quantitative determinations of the damage produced have been performed from infrared spectroscopy. We show that two dose thresholds for damage are encountered: At 1014 cm−2 damage saturates and for doses above 1017 cm−2 sputtering effects dominate. Annealing at high temperatures (1100 °C) restores the structure of the initial nonimplanted oxide only for doses below the second threshold, although some disorder remains. Electroluminescence measurements show that annealing is able to eliminate electrically active defects. For implantation doses greater than 1017 cm−2, annealing is unable to restore the structure completely as sputtering effects create a depleted oxygen layer at the surface and substoichiometric defects appear. The presence of microcavities created by the Ar atoms at such high doses may affect th...American Institute of Physics2012201219842012info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersion9 p.application/pdfapplication/pdfhttps://hdl.handle.net/2445/24747Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)reponame:Recercat. Dipósit de la Recerca de Catalunyainstname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)InglésReproducció del document publicat a: http://dx.doi.org/10.1063/1.363998Journal of Applied Physics, 1997, vol. 81, núm. 1, p. 126-134http://dx.doi.org/10.1063/1.363998(c) American Institute of Physics, 1998info:eu-repo/semantics/openAccessoai:recercat.cat:2445/247472026-05-29T05:05:01Z
dc.title.none.fl_str_mv Reconstruction of the SiO2 structure damaged by low-energy Ar-implanted ions
title Reconstruction of the SiO2 structure damaged by low-energy Ar-implanted ions
spellingShingle Reconstruction of the SiO2 structure damaged by low-energy Ar-implanted ions
Garrido Fernández, Blas
Implantació d'ions
Espectroscòpia
Spectrum analysis
Ion implantation
title_short Reconstruction of the SiO2 structure damaged by low-energy Ar-implanted ions
title_full Reconstruction of the SiO2 structure damaged by low-energy Ar-implanted ions
title_fullStr Reconstruction of the SiO2 structure damaged by low-energy Ar-implanted ions
title_full_unstemmed Reconstruction of the SiO2 structure damaged by low-energy Ar-implanted ions
title_sort Reconstruction of the SiO2 structure damaged by low-energy Ar-implanted ions
dc.creator.none.fl_str_mv Garrido Fernández, Blas
Samitier i Martí, Josep
Bota Ferragut, Sebastián Antonio
Moreno, J. A.
Montserrat i Martí, Josep
Morante i Lleonart, Joan Ramon
author Garrido Fernández, Blas
author_facet Garrido Fernández, Blas
Samitier i Martí, Josep
Bota Ferragut, Sebastián Antonio
Moreno, J. A.
Montserrat i Martí, Josep
Morante i Lleonart, Joan Ramon
author_role author
author2 Samitier i Martí, Josep
Bota Ferragut, Sebastián Antonio
Moreno, J. A.
Montserrat i Martí, Josep
Morante i Lleonart, Joan Ramon
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv Implantació d'ions
Espectroscòpia
Spectrum analysis
Ion implantation
topic Implantació d'ions
Espectroscòpia
Spectrum analysis
Ion implantation
description The damage created in SiO2 layers by low-energy Ar ions (130 keV) and the reconstruction of the structure after various annealing steps have been characterized as a function of the implantation dose. Quantitative determinations of the damage produced have been performed from infrared spectroscopy. We show that two dose thresholds for damage are encountered: At 1014 cm−2 damage saturates and for doses above 1017 cm−2 sputtering effects dominate. Annealing at high temperatures (1100 °C) restores the structure of the initial nonimplanted oxide only for doses below the second threshold, although some disorder remains. Electroluminescence measurements show that annealing is able to eliminate electrically active defects. For implantation doses greater than 1017 cm−2, annealing is unable to restore the structure completely as sputtering effects create a depleted oxygen layer at the surface and substoichiometric defects appear. The presence of microcavities created by the Ar atoms at such high doses may affect th...
publishDate 1984
dc.date.none.fl_str_mv 1984
2012
2012
2012
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/24747
url https://hdl.handle.net/2445/24747
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Reproducció del document publicat a: http://dx.doi.org/10.1063/1.363998
Journal of Applied Physics, 1997, vol. 81, núm. 1, p. 126-134
http://dx.doi.org/10.1063/1.363998
dc.rights.none.fl_str_mv (c) American Institute of Physics, 1998
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) American Institute of Physics, 1998
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 9 p.
application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
reponame:Recercat. Dipósit de la Recerca de Catalunya
instname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
instname_str Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
reponame_str Recercat. Dipósit de la Recerca de Catalunya
collection Recercat. Dipósit de la Recerca de Catalunya
repository.name.fl_str_mv
repository.mail.fl_str_mv
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