Resonant photoemission in Cr silicide at the absorption energy Cr2p
Valence band photoemission has been measured in chromium silicide as a function of the photon energy near the Cr 2p3/2 absorption threshold. Evidence of resonant photoemission is observed for the 3d valence band and the two-hole satellite. The threshold for normal Auger regime is 2.8 eV below the ab...
| Autores: | , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2004 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/23441 |
| Acceso en línea: | http://hdl.handle.net/10261/23441 |
| Access Level: | acceso abierto |
| Palabra clave: | Chromium compounds Silicon compounds Photoemission Valence bands Resonance Auger effect |
| Sumario: | Valence band photoemission has been measured in chromium silicide as a function of the photon energy near the Cr 2p3/2 absorption threshold. Evidence of resonant photoemission is observed for the 3d valence band and the two-hole satellite. The threshold for normal Auger regime is 2.8 eV below the absorption peak and 0.8 eV below the Cr 2p3/2 binding energy, even lower than in pure Cr metal where it is already at extreme levels. The requirement for good resolution in photon energy relative to absorption width for the resonant Raman Auger to be observed is found to be less restrictive than expected. |
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