Effective electrochemical n-type doping of ZnO thin films for optoelectronic window applications

[EN] An effective n-type doping of ZnO thin films electrochemically synthetized was achieved by varying the chloride ion concentration in the starting electrolyte. The ratio between chloride and zinc cations was varied between 0 and 2 while the zinc concentration in the solution was kept constant. W...

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Autores: Cembrero Coca, Paula, Singh, K.C., Mollar García, Miguel Alfonso|||0000-0003-4315-0407, Marí, B.|||0000-0003-0001-419X
Tipo de recurso: artículo
Fecha de publicación:2013
País:España
Institución:Universitat Politècnica de València (UPV)
Repositorio:RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
Idioma:inglés
OAI Identifier:oai:riunet.upv.es:10251/44374
Acceso en línea:https://riunet.upv.es/handle/10251/44374
Access Level:acceso abierto
Palabra clave:ZnO
Electrodeposition
Doping
FISICA APLICADA
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spelling Effective electrochemical n-type doping of ZnO thin films for optoelectronic window applicationsCembrero Coca, PaulaSingh, K.C.Mollar García, Miguel Alfonso|||0000-0003-4315-0407Marí, B.|||0000-0003-0001-419XZnOElectrodepositionDopingFISICA APLICADA[EN] An effective n-type doping of ZnO thin films electrochemically synthetized was achieved by varying the chloride ion concentration in the starting electrolyte. The ratio between chloride and zinc cations was varied between 0 and 2 while the zinc concentration in the solution was kept constant. When the concentration of chloride in the bath increases an effective n-type doping of ZnO films takes place. n-type doping is evidenced by the rise of donors concentration, obtained from Mott-Schottky measurements, as well as from the blueshift observed in the optical gap owing to the Burstein-Moss effect.This work was supported by Spanish Government through MCINN grant MAT2009-14625-C03-03 and European Commission through NanoCIS project FP7-PEOPLE-2010-IRSES (ref. 269279).Springer Verlag (Germany)Departamento de Física AplicadaEscuela Técnica Superior de Ingeniería Aeroespacial y Diseño IndustrialInstituto de Diseño para la Fabricación y Producción AutomatizadaMinisterio de Ciencia e InnovaciónEuropean CommissionRepositorio Institucional de la Universitat Politècnica de València Riunet20132013-05-01journal articlehttp://purl.org/coar/resource_type/c_6501VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleapplication/pdfapplication/pdfhttps://riunet.upv.es/handle/10251/44374reponame:RiuNet. Repositorio Institucional de la Universitat Politécnica de Valénciainstname:Universitat Politècnica de València (UPV)InglésengMinisterio de Ciencia e Innovación http://dx.doi.org/10.13039/501100004837 MAT2009-14625-C03-03 Diseño, Sintesis Y Caracterizacion De Materiales Fotovoltaicos Avanzados De Alta EficienciaEuropean Commission https://doi.org/10.13039/501100000780 FP7 269279 Development of a new generation of CIGS-based solar cellsopen accesshttp://purl.org/coar/access_right/c_abf2Reserva de todos los derechoshttp://rightsstatements.org/vocab/InC/1.0/info:eu-repo/semantics/openAccessoai:riunet.upv.es:10251/443742026-06-13T07:49:27Z
dc.title.none.fl_str_mv Effective electrochemical n-type doping of ZnO thin films for optoelectronic window applications
title Effective electrochemical n-type doping of ZnO thin films for optoelectronic window applications
spellingShingle Effective electrochemical n-type doping of ZnO thin films for optoelectronic window applications
Cembrero Coca, Paula
ZnO
Electrodeposition
Doping
FISICA APLICADA
title_short Effective electrochemical n-type doping of ZnO thin films for optoelectronic window applications
title_full Effective electrochemical n-type doping of ZnO thin films for optoelectronic window applications
title_fullStr Effective electrochemical n-type doping of ZnO thin films for optoelectronic window applications
title_full_unstemmed Effective electrochemical n-type doping of ZnO thin films for optoelectronic window applications
title_sort Effective electrochemical n-type doping of ZnO thin films for optoelectronic window applications
dc.creator.none.fl_str_mv Cembrero Coca, Paula
Singh, K.C.
Mollar García, Miguel Alfonso|||0000-0003-4315-0407
Marí, B.|||0000-0003-0001-419X
author Cembrero Coca, Paula
author_facet Cembrero Coca, Paula
Singh, K.C.
Mollar García, Miguel Alfonso|||0000-0003-4315-0407
Marí, B.|||0000-0003-0001-419X
author_role author
author2 Singh, K.C.
Mollar García, Miguel Alfonso|||0000-0003-4315-0407
Marí, B.|||0000-0003-0001-419X
author2_role author
author
author
dc.contributor.none.fl_str_mv Departamento de Física Aplicada
Escuela Técnica Superior de Ingeniería Aeroespacial y Diseño Industrial
Instituto de Diseño para la Fabricación y Producción Automatizada
Ministerio de Ciencia e Innovación
European Commission
Repositorio Institucional de la Universitat Politècnica de València Riunet
dc.subject.none.fl_str_mv ZnO
Electrodeposition
Doping
FISICA APLICADA
topic ZnO
Electrodeposition
Doping
FISICA APLICADA
description [EN] An effective n-type doping of ZnO thin films electrochemically synthetized was achieved by varying the chloride ion concentration in the starting electrolyte. The ratio between chloride and zinc cations was varied between 0 and 2 while the zinc concentration in the solution was kept constant. When the concentration of chloride in the bath increases an effective n-type doping of ZnO films takes place. n-type doping is evidenced by the rise of donors concentration, obtained from Mott-Schottky measurements, as well as from the blueshift observed in the optical gap owing to the Burstein-Moss effect.
publishDate 2013
dc.date.none.fl_str_mv 2013
2013-05-01
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
VoR
http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://riunet.upv.es/handle/10251/44374
url https://riunet.upv.es/handle/10251/44374
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.relation.none.fl_str_mv Ministerio de Ciencia e Innovación http://dx.doi.org/10.13039/501100004837 MAT2009-14625-C03-03 Diseño, Sintesis Y Caracterizacion De Materiales Fotovoltaicos Avanzados De Alta Eficiencia
European Commission https://doi.org/10.13039/501100000780 FP7 269279 Development of a new generation of CIGS-based solar cells
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
Reserva de todos los derechos
http://rightsstatements.org/vocab/InC/1.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
Reserva de todos los derechos
http://rightsstatements.org/vocab/InC/1.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Springer Verlag (Germany)
publisher.none.fl_str_mv Springer Verlag (Germany)
dc.source.none.fl_str_mv reponame:RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
instname:Universitat Politècnica de València (UPV)
instname_str Universitat Politècnica de València (UPV)
reponame_str RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
collection RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869407351538188288
score 15.300724

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