Accurate band mapping via photoemission from thin films

Electron bands in solids can be determined in angle-resolved photoemission experiments from thin films, where the perpendicular wave vector (k⊥) uncertainty that characterizes photoemission from bulk crystals is removed. However, the comparison with state-of-the-art quasiparticle band-structure calc...

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Detalles Bibliográficos
Autores: Mugarza, Aitor, Marini, Andrea, Strasser, T., Schattke, W., Rubio, Angel, García de Abajo, Francisco Javier, Lobo-Checa, Jorge, Michel, Enrique G., Kuntze, J., Ortega, J. Enrique
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2004
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/98098
Acceso en línea:http://hdl.handle.net/10261/98098
Access Level:acceso abierto
Descripción
Sumario:Electron bands in solids can be determined in angle-resolved photoemission experiments from thin films, where the perpendicular wave vector (k⊥) uncertainty that characterizes photoemission from bulk crystals is removed. However, the comparison with state-of-the-art quasiparticle band-structure calculations has never been done. In this work we have mapped both initial-state (occupied) and final-state (empty) E(k⊥) bands along the A axis of aluminum, from photon-energy- and thickness-dependent quantum-well spectra of aluminum films. For final states the best fit is obtained with inverse low-energy electron diffraction band structure calculations. For initial-state bands of Cu and Al, thin-film data display excellent agreement with bulk quasiparticle theory, suggesting the use of thin films as model systems to investigate fine effects in the crystal band structure.

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