Waveguide saturable absorbers at 1.55 μm based on intraband transitions in GaN/AlN QDs
We report on the design, fabrication and optical characterization of GaN/AlN quantum-dot-based waveguides for all-optical switching via intraband absorption saturation at 1.55 μm. The transmittance of the TMpolarized light increases with the incident optical power due to the saturation of the s-p z...
| Autores: | , , , , , , , , |
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| Formato: | artículo |
| Fecha de publicación: | 2013 |
| País: | España |
| Recursos: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/89622 |
| Acesso em linha: | http://hdl.handle.net/10261/89622 |
| Access Level: | acceso abierto |
| Palavra-chave: | All-optical devices Waveguides Semiconductor nonlinear optics including MQW |
| Resumo: | We report on the design, fabrication and optical characterization of GaN/AlN quantum-dot-based waveguides for all-optical switching via intraband absorption saturation at 1.55 μm. The transmittance of the TMpolarized light increases with the incident optical power due to the saturation of the s-p z intraband absorption in the QDs. Single-mode waveguides with a ridge width of 2 μm and a length of 1.5 mm display 10 dB absorption saturation of the TM-polarized light for an input pulse energy of 8 p J and 150 fs. © 2013 Optical Society of America. |
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