Optically-thin broadband graphene-membrane photodetector
A broadband graphene-on-Si3N4-membrane photodetector for the visible-IR spectral range is realised by simple lithography and deposition techniques. Photo-current is produced upon illumination due to presence of the build-in potential between dissimilar metal electrodes on graphene as a result of cha...
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2020 |
| País: | España |
| Institución: | Universitat Politècnica de Catalunya (UPC) |
| Repositorio: | UPCommons. Portal del coneixement obert de la UPC |
| Idioma: | inglés |
| OAI Identifier: | oai:upcommons.upc.edu:2117/184034 |
| Acceso en línea: | https://hdl.handle.net/2117/184034 https://dx.doi.org/10.3390/nano10030407 |
| Access Level: | acceso abierto |
| Palabra clave: | Graphene Optically thin photodetector Si3N4 membrane Thermopower Grafè Àrees temàtiques de la UPC::Física |
| Sumario: | A broadband graphene-on-Si3N4-membrane photodetector for the visible-IR spectral range is realised by simple lithography and deposition techniques. Photo-current is produced upon illumination due to presence of the build-in potential between dissimilar metal electrodes on graphene as a result of charge transfer. The sensitivity of the photo-detector is ~1.1 µA/W when irradiated with 515 and 1030 nm wavelengths; a smaller separation between the metal contacts favors gradient formation of the built-in electric field and increases the efficiency of charge separation. This optically-thin graphene-on-membrane photodetector and its interdigitated counterpart has the potential to be used within 3D optical elements, such as photonic crystals, sensors, and wearable electronics applications where there is a need to minimise optical losses introduced by the detector. |
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