Oxygen vacancy engineering in pulsed laser deposited BaSnO3 thin films on SrTiO3

We demonstrate the tunability of the oxygen content in pulsed laser deposition-grown barium stannate thin films (BaSn O3, BSO) by precisely controlling the background oxygen pressure over a broad range from 0.0004 to 0.13 mbar. The introduction of oxygen vacancies (OV) significantly alters the struc...

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Autores: Román Acevedo, Wilson, Aguirre, Myriam H., Noheda, Beatriz, Rubi, Diego
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2025
País:España
Institución:Universidad de Zaragoza
Repositorio:Zaguán. Repositorio Digital de la Universidad de Zaragoza
OAI Identifier:oai:zaguan.unizar.es:162962
Acceso en línea:http://zaguan.unizar.es/record/162962
Access Level:acceso abierto
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spelling Oxygen vacancy engineering in pulsed laser deposited BaSnO3 thin films on SrTiO3Román Acevedo, WilsonAguirre, Myriam H.Noheda, BeatrizRubi, DiegoWe demonstrate the tunability of the oxygen content in pulsed laser deposition-grown barium stannate thin films (BaSn O3, BSO) by precisely controlling the background oxygen pressure over a broad range from 0.0004 to 0.13 mbar. The introduction of oxygen vacancies (OV) significantly alters the structural properties of BSO films, inducing a monotonic expansion of the out-of-plane lattice parameter and cell volume as the vacancy concentration increases. The progressive formation of OV was spectroscopically tracked using x-ray photoelectron spectroscopy, providing direct insight into the vacancy evolution. Furthermore, we show that the oxygen stoichiometry in BSO plays a critical role in modulating the sheet resistance of BSO/LaScO3 heterostructures, enabling interface metallic electron conduction. This oxygen content control offers a robust strategy to tailor the electronic properties at the interface, highlighting its potential for oxide electronics and functional interface engineering.2025info:eu-repo/semantics/articleinfo:eu-repo/semantics/acceptedVersionapplication/pdfhttp://zaguan.unizar.es/record/162962reponame:Zaguán. Repositorio Digital de la Universidad de Zaragozainstname:Universidad de ZaragozaInglésinfo:eu-repo/semantics/openAccessoai:zaguan.unizar.es:1629622026-05-29T13:59:51Z
dc.title.none.fl_str_mv Oxygen vacancy engineering in pulsed laser deposited BaSnO3 thin films on SrTiO3
title Oxygen vacancy engineering in pulsed laser deposited BaSnO3 thin films on SrTiO3
spellingShingle Oxygen vacancy engineering in pulsed laser deposited BaSnO3 thin films on SrTiO3
Román Acevedo, Wilson
title_short Oxygen vacancy engineering in pulsed laser deposited BaSnO3 thin films on SrTiO3
title_full Oxygen vacancy engineering in pulsed laser deposited BaSnO3 thin films on SrTiO3
title_fullStr Oxygen vacancy engineering in pulsed laser deposited BaSnO3 thin films on SrTiO3
title_full_unstemmed Oxygen vacancy engineering in pulsed laser deposited BaSnO3 thin films on SrTiO3
title_sort Oxygen vacancy engineering in pulsed laser deposited BaSnO3 thin films on SrTiO3
dc.creator.none.fl_str_mv Román Acevedo, Wilson
Aguirre, Myriam H.
Noheda, Beatriz
Rubi, Diego
author Román Acevedo, Wilson
author_facet Román Acevedo, Wilson
Aguirre, Myriam H.
Noheda, Beatriz
Rubi, Diego
author_role author
author2 Aguirre, Myriam H.
Noheda, Beatriz
Rubi, Diego
author2_role author
author
author
description We demonstrate the tunability of the oxygen content in pulsed laser deposition-grown barium stannate thin films (BaSn O3, BSO) by precisely controlling the background oxygen pressure over a broad range from 0.0004 to 0.13 mbar. The introduction of oxygen vacancies (OV) significantly alters the structural properties of BSO films, inducing a monotonic expansion of the out-of-plane lattice parameter and cell volume as the vacancy concentration increases. The progressive formation of OV was spectroscopically tracked using x-ray photoelectron spectroscopy, providing direct insight into the vacancy evolution. Furthermore, we show that the oxygen stoichiometry in BSO plays a critical role in modulating the sheet resistance of BSO/LaScO3 heterostructures, enabling interface metallic electron conduction. This oxygen content control offers a robust strategy to tailor the electronic properties at the interface, highlighting its potential for oxide electronics and functional interface engineering.
publishDate 2025
dc.date.none.fl_str_mv 2025
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv http://zaguan.unizar.es/record/162962
url http://zaguan.unizar.es/record/162962
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv
publisher.none.fl_str_mv
dc.source.none.fl_str_mv reponame:Zaguán. Repositorio Digital de la Universidad de Zaragoza
instname:Universidad de Zaragoza
instname_str Universidad de Zaragoza
reponame_str Zaguán. Repositorio Digital de la Universidad de Zaragoza
collection Zaguán. Repositorio Digital de la Universidad de Zaragoza
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15.812455

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