Tunable photodetectors via in situ thermal conversion of TiS3 to TiO2

In two-dimensional materials research, oxidation is usually considered as a common source for the degradation of electronic and optoelectronic devices or even device failure. However, in some cases a controlled oxidation can open the possibility to widely tune the band structure of 2D materials. In...

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Authors: Ghasemi, Foad, Frisenda, Riccardo, Flores, Eduardo, Papadopoulos, Nikos, Biele, Robert, Pérez de Lara, David, Zant, Herre S. J. van der, Watanabe, Kenji, Taniguchi, Takashi, D’Agosta, Roberto, Ares, José R., Sánchez, Carlos, Ferrer, Isabel J., Castellanos-Gómez, Andrés
Format: article
Status:Published version
Publication Date:2020
Country:España
Institution:Consejo Superior de Investigaciones Científicas (CSIC)
Repository:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/209472
Online Access:http://hdl.handle.net/10261/209472
Access Level:Open access
Keyword:2D materials
Photodetectors
oxidation
TiS3
TiO2
Raman spectroscopy
DFT GW
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spelling Tunable photodetectors via in situ thermal conversion of TiS3 to TiO2Ghasemi, FoadFrisenda, RiccardoFlores, EduardoPapadopoulos, NikosBiele, RobertPérez de Lara, DavidZant, Herre S. J. van derWatanabe, KenjiTaniguchi, TakashiD’Agosta, RobertoAres, José R.Sánchez, CarlosFerrer, Isabel J.Castellanos-Gómez, Andrés2D materialsPhotodetectorsoxidationTiS3TiO2Raman spectroscopyDFT GWIn two-dimensional materials research, oxidation is usually considered as a common source for the degradation of electronic and optoelectronic devices or even device failure. However, in some cases a controlled oxidation can open the possibility to widely tune the band structure of 2D materials. In particular, we demonstrate the controlled oxidation of titanium trisulfide (TiS<sub>3</sub>), a layered semicon-ductor that has attracted much attention recently thanks to its quasi-1D electronic and optoelectron-ic properties and its direct bandgap of 1.1 eV. Heating TiS<sub>3</sub> in air above 300 °C gradually converts it into TiO<sub>2</sub>, a semiconductor with a wide bandgap of 3.2 eV with applications in photo-electrochemistry and catalysis. In this work, we investigate the controlled thermal oxidation of indi-vidual TiS<sub>3</sub> nanoribbons and its influence on the optoelectronic properties of TiS<sub>3</sub>-based photodetec-tors. We observe a step-wise change in the cut-off wavelength from its pristine value ~1000 nm to 450 nm after subjecting the TiS<sub>3</sub> devices to subsequent thermal treatment cycles. Ab-initio and many-body calculations confirm an increase in the bandgap of titanium oxysulfide (TiO<sub>2-x</sub>S<sub>x</sub>) when in-creasing the amount of oxygen and reducing the amount of sulfur.Peer reviewedMultidisciplinary Digital Publishing InstituteConsejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]2020202020202020info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionhttp://hdl.handle.net/10261/209472reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Ingléshttps://doi.org/10.3390/nano10040711Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/2094722026-05-22T06:33:51Z
dc.title.none.fl_str_mv Tunable photodetectors via in situ thermal conversion of TiS3 to TiO2
title Tunable photodetectors via in situ thermal conversion of TiS3 to TiO2
spellingShingle Tunable photodetectors via in situ thermal conversion of TiS3 to TiO2
Ghasemi, Foad
2D materials
Photodetectors
oxidation
TiS3
TiO2
Raman spectroscopy
DFT GW
title_short Tunable photodetectors via in situ thermal conversion of TiS3 to TiO2
title_full Tunable photodetectors via in situ thermal conversion of TiS3 to TiO2
title_fullStr Tunable photodetectors via in situ thermal conversion of TiS3 to TiO2
title_full_unstemmed Tunable photodetectors via in situ thermal conversion of TiS3 to TiO2
title_sort Tunable photodetectors via in situ thermal conversion of TiS3 to TiO2
dc.creator.none.fl_str_mv Ghasemi, Foad
Frisenda, Riccardo
Flores, Eduardo
Papadopoulos, Nikos
Biele, Robert
Pérez de Lara, David
Zant, Herre S. J. van der
Watanabe, Kenji
Taniguchi, Takashi
D’Agosta, Roberto
Ares, José R.
Sánchez, Carlos
Ferrer, Isabel J.
Castellanos-Gómez, Andrés
author Ghasemi, Foad
author_facet Ghasemi, Foad
Frisenda, Riccardo
Flores, Eduardo
Papadopoulos, Nikos
Biele, Robert
Pérez de Lara, David
Zant, Herre S. J. van der
Watanabe, Kenji
Taniguchi, Takashi
D’Agosta, Roberto
Ares, José R.
Sánchez, Carlos
Ferrer, Isabel J.
Castellanos-Gómez, Andrés
author_role author
author2 Frisenda, Riccardo
Flores, Eduardo
Papadopoulos, Nikos
Biele, Robert
Pérez de Lara, David
Zant, Herre S. J. van der
Watanabe, Kenji
Taniguchi, Takashi
D’Agosta, Roberto
Ares, José R.
Sánchez, Carlos
Ferrer, Isabel J.
Castellanos-Gómez, Andrés
author2_role author
author
author
author
author
author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv 2D materials
Photodetectors
oxidation
TiS3
TiO2
Raman spectroscopy
DFT GW
topic 2D materials
Photodetectors
oxidation
TiS3
TiO2
Raman spectroscopy
DFT GW
description In two-dimensional materials research, oxidation is usually considered as a common source for the degradation of electronic and optoelectronic devices or even device failure. However, in some cases a controlled oxidation can open the possibility to widely tune the band structure of 2D materials. In particular, we demonstrate the controlled oxidation of titanium trisulfide (TiS<sub>3</sub>), a layered semicon-ductor that has attracted much attention recently thanks to its quasi-1D electronic and optoelectron-ic properties and its direct bandgap of 1.1 eV. Heating TiS<sub>3</sub> in air above 300 °C gradually converts it into TiO<sub>2</sub>, a semiconductor with a wide bandgap of 3.2 eV with applications in photo-electrochemistry and catalysis. In this work, we investigate the controlled thermal oxidation of indi-vidual TiS<sub>3</sub> nanoribbons and its influence on the optoelectronic properties of TiS<sub>3</sub>-based photodetec-tors. We observe a step-wise change in the cut-off wavelength from its pristine value ~1000 nm to 450 nm after subjecting the TiS<sub>3</sub> devices to subsequent thermal treatment cycles. Ab-initio and many-body calculations confirm an increase in the bandgap of titanium oxysulfide (TiO<sub>2-x</sub>S<sub>x</sub>) when in-creasing the amount of oxygen and reducing the amount of sulfur.
publishDate 2020
dc.date.none.fl_str_mv 2020
2020
2020
2020
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Publisher's version
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/209472
url http://hdl.handle.net/10261/209472
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv https://doi.org/10.3390/nano10040711
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv Multidisciplinary Digital Publishing Institute
publisher.none.fl_str_mv Multidisciplinary Digital Publishing Institute
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,81155

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