Optoelectronic properties of electronacceptor molecules adsorbed on graphene/silicon carbide interfaces
Silicon carbide has emerged as an optimal semiconducting support for graphene growth. In previous studies, the formation of an interfacial graphene-like buffer layer covalently bonded to silicon carbide has been observed, revealing electronic properties distinct from ideal graphene. Despite extensiv...
| Autores: | , , |
|---|---|
| Tipo de recurso: | artículo |
| Fecha de publicación: | 2024 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/105848 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/105848 |
| Access Level: | acceso abierto |
| Palabra clave: | 544 Optoelectronic properties Electron-acceptor molecules Graphene Silicon carbide Química física (Física) 2307 Química Física |
| Sumario: | Silicon carbide has emerged as an optimal semiconducting support for graphene growth. In previous studies, the formation of an interfacial graphene-like buffer layer covalently bonded to silicon carbide has been observed, revealing electronic properties distinct from ideal graphene. Despite extensive experimental efforts dedicated to this interface, theoretical investigations have been confined to its ground state. Here, we use many-body perturbation theory to study the electronic and optical characteristics of this interface and demonstrate its potential for optoelectronics. By adsorbing graphene, we show that the quasiparticle band structure exhibits a reduced bandgap, associated with an optical onset in the visible energy window. Furthermore, we reveal that the absorption of two prototypical electron-accepting molecules on this substrate results in a significant renormalization of the adsorbate gap, giving rise to distinct low-lying optically excited states in the near-infrared region. These states are well-separated from the substrate’s absorption bands, ensuring wavelength selectivity for molecular optoelectronic applications. |
|---|