Spatiotemporal stabilization proof of concept of Broad Area Semiconductor laser sources

We provide a numerical proof of concept of a stabilization mechanism for BAS laser sources. The scheme is based on the simultaneous introduction of in-phase two-dimensional modulations on the refractive index and pump (gain). We numerically proof total stabilization in BAS laser sources, both in spa...

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Detalles Bibliográficos
Autores: Medina Pardell, Judith|||0000-0002-9423-0645, Ahmed Waseem, Waqas Waseem, Kumar, Shubham, Botey Cumella, Muriel|||0000-0001-8984-4899, Herrero Simon, Ramon|||0000-0001-5572-1540, Staliunas, Kestutis|||0000-0002-0539-9538
Tipo de recurso: informe técnico
Fecha de publicación:2018
País:España
Institución:Universitat Politècnica de Catalunya (UPC)
Repositorio:UPCommons. Portal del coneixement obert de la UPC
Idioma:inglés
OAI Identifier:oai:upcommons.upc.edu:2117/345970
Acceso en línea:https://hdl.handle.net/2117/345970
Access Level:acceso abierto
Palabra clave:Semiconductor laser
Làsers de semiconductors
Àrees temàtiques de la UPC::Física
Descripción
Sumario:We provide a numerical proof of concept of a stabilization mechanism for BAS laser sources. The scheme is based on the simultaneous introduction of in-phase two-dimensional modulations on the refractive index and pump (gain). We numerically proof total stabilization in BAS laser sources, both in space and time. We also examine the interplay between the index and gain modulations and the effect of the slow relaxation of carriers on the stabilization performance.

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