Bulk silica-based luminescent materials by sol-gel processing of non-conventional precursors

The sol-gel synthesis of bulk silica-based luminescent materials using innocuous hexaethoxydisilane and hexamethoxydisilane monomers, followed by one hour thermal annealing in an inert atmosphere at 950oC-1150oC, is reported. As-synthesized hexamethoxydisilane-derived samples exhibit an intense blue...

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Autores: Rodríguez, J. A., Fernández-Sánchez, C., Domínguez, Carlos (Domínguez Horna), Hernández Márquez, Sergi, Berencén Ramírez, Yonder Antonio
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2012
País:España
Institución:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Repositorio:Recercat. Dipósit de la Recerca de Catalunya
OAI Identifier:oai:recercat.cat:2445/32748
Acceso en línea:https://hdl.handle.net/2445/32748
Access Level:acceso abierto
Palabra clave:Pel·lícules fines
Microelectrònica
Luminescència
Optoelectrònica
Thin films
Microelectronics
Luminescence
Optoelectronics
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spelling Bulk silica-based luminescent materials by sol-gel processing of non-conventional precursorsRodríguez, J. A.Fernández-Sánchez, C.Domínguez, Carlos (Domínguez Horna)Hernández Márquez, SergiBerencén Ramírez, Yonder AntonioPel·lícules finesMicroelectrònicaLuminescènciaOptoelectrònicaThin filmsMicroelectronicsLuminescenceOptoelectronicsThe sol-gel synthesis of bulk silica-based luminescent materials using innocuous hexaethoxydisilane and hexamethoxydisilane monomers, followed by one hour thermal annealing in an inert atmosphere at 950oC-1150oC, is reported. As-synthesized hexamethoxydisilane-derived samples exhibit an intense blue photoluminescence band, whereas thermally treated ones emit stronger photoluminescence radiation peaking below 600 nm. For hexaethoxydisilane-based material, annealed at or above 1000oC, a less intense photoluminescence band, peaking between 780 nm and 850 nm that is attributed to nanocrystalline silicon is observed. Mixtures of both precursors lead to composed spectra, thus envisaging the possibility of obtaining pre-designed spectral behaviors by varying the mixture composition.American Institute of Physics2012201220122012info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersion4 p.application/pdfhttps://hdl.handle.net/2445/32748Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)reponame:Recercat. Dipósit de la Recerca de Catalunyainstname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)InglésReproducció del document publicat a: http://dx.doi.org/10.1063/1.4764561Applied Physics Letters, 2012, vol. 101, p. 171908-1-171908-4http://dx.doi.org/171908-1-171908-4(c) American Institute of Physics , 2012info:eu-repo/semantics/openAccessoai:recercat.cat:2445/327482026-05-29T05:05:01Z
dc.title.none.fl_str_mv Bulk silica-based luminescent materials by sol-gel processing of non-conventional precursors
title Bulk silica-based luminescent materials by sol-gel processing of non-conventional precursors
spellingShingle Bulk silica-based luminescent materials by sol-gel processing of non-conventional precursors
Rodríguez, J. A.
Pel·lícules fines
Microelectrònica
Luminescència
Optoelectrònica
Thin films
Microelectronics
Luminescence
Optoelectronics
title_short Bulk silica-based luminescent materials by sol-gel processing of non-conventional precursors
title_full Bulk silica-based luminescent materials by sol-gel processing of non-conventional precursors
title_fullStr Bulk silica-based luminescent materials by sol-gel processing of non-conventional precursors
title_full_unstemmed Bulk silica-based luminescent materials by sol-gel processing of non-conventional precursors
title_sort Bulk silica-based luminescent materials by sol-gel processing of non-conventional precursors
dc.creator.none.fl_str_mv Rodríguez, J. A.
Fernández-Sánchez, C.
Domínguez, Carlos (Domínguez Horna)
Hernández Márquez, Sergi
Berencén Ramírez, Yonder Antonio
author Rodríguez, J. A.
author_facet Rodríguez, J. A.
Fernández-Sánchez, C.
Domínguez, Carlos (Domínguez Horna)
Hernández Márquez, Sergi
Berencén Ramírez, Yonder Antonio
author_role author
author2 Fernández-Sánchez, C.
Domínguez, Carlos (Domínguez Horna)
Hernández Márquez, Sergi
Berencén Ramírez, Yonder Antonio
author2_role author
author
author
author
dc.subject.none.fl_str_mv Pel·lícules fines
Microelectrònica
Luminescència
Optoelectrònica
Thin films
Microelectronics
Luminescence
Optoelectronics
topic Pel·lícules fines
Microelectrònica
Luminescència
Optoelectrònica
Thin films
Microelectronics
Luminescence
Optoelectronics
description The sol-gel synthesis of bulk silica-based luminescent materials using innocuous hexaethoxydisilane and hexamethoxydisilane monomers, followed by one hour thermal annealing in an inert atmosphere at 950oC-1150oC, is reported. As-synthesized hexamethoxydisilane-derived samples exhibit an intense blue photoluminescence band, whereas thermally treated ones emit stronger photoluminescence radiation peaking below 600 nm. For hexaethoxydisilane-based material, annealed at or above 1000oC, a less intense photoluminescence band, peaking between 780 nm and 850 nm that is attributed to nanocrystalline silicon is observed. Mixtures of both precursors lead to composed spectra, thus envisaging the possibility of obtaining pre-designed spectral behaviors by varying the mixture composition.
publishDate 2012
dc.date.none.fl_str_mv 2012
2012
2012
2012
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/32748
url https://hdl.handle.net/2445/32748
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Reproducció del document publicat a: http://dx.doi.org/10.1063/1.4764561
Applied Physics Letters, 2012, vol. 101, p. 171908-1-171908-4
http://dx.doi.org/171908-1-171908-4
dc.rights.none.fl_str_mv (c) American Institute of Physics , 2012
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) American Institute of Physics , 2012
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 4 p.
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
reponame:Recercat. Dipósit de la Recerca de Catalunya
instname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
instname_str Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
reponame_str Recercat. Dipósit de la Recerca de Catalunya
collection Recercat. Dipósit de la Recerca de Catalunya
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,811543

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