Modification of HF-treated silicon (100) surfaces by scanning tunneling microscopy in air under imaging conditions
The modification of HF-etched silicon (100) surface with a scanning tunneling microscope(STM) operated in air is studied for the first time in samples subjected to the standard HF etching without the follow-up rinsing in H2O. The modifications are produced in air under normal STM imaging conditions...
| Autores: | , , |
|---|---|
| Tipo de recurso: | artículo |
| Fecha de publicación: | 1992 |
| País: | España |
| Institución: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:ddd.uab.cat:116309 |
| Acceso en línea: | https://ddd.uab.cat/record/116309 https://dx.doi.org/urn:doi:10.1063/1.107885 |
| Access Level: | acceso abierto |
| Palabra clave: | Scanning tunneling microscopy Silicon Surface oxidation Surface treatments Etching Nonlinear acoustics Scanning tunneling microscopes Tunneling Water vapor |
| Sumario: | The modification of HF-etched silicon (100) surface with a scanning tunneling microscope(STM) operated in air is studied for the first time in samples subjected to the standard HF etching without the follow-up rinsing in H2O. The modifications are produced in air under normal STM imaging conditions (V t =-1.4 V and I t =2 nA). The simultaneous acquisition of topographical, current image tunneling spectroscopy and local barrier-height images clearly shows that the nature of the modification is not only topographical but also chemical. The features produced with a resolution better than 25 nm are attributed to a tip-induced oxidation enhanced by the presence of fluorine on the surface. |
|---|