Decoration of extended defects in GaSb by Al doping as evidenced by cathodoluminescence studies

The effect of aluminium on the defect structure of GaSb crystals, grown by the vertical Bridgman technique, has been investigated by cathodoluminescence (CL) in the scanning electron microscope. Crystals have been found to be highly homogeneous along the growth axis with the exception of the top end...

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Detalhes bibliográficos
Autores: Hidalgo Alcalde, Pedro, Méndez Martín, María Bianchi, Piqueras De Noriega, Francisco Javier, Dutta, P.S., Diéguez, E.
Formato: artículo
Fecha de publicación:1998
País:España
Recursos:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/58956
Acesso em linha:https://hdl.handle.net/20.500.14352/58956
Access Level:acceso abierto
Palavra-chave:538.9
Liquid-Phase Epitaxy
Gallium Antimonide
Doped Gasb
Growth
Física de materiales
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spelling Decoration of extended defects in GaSb by Al doping as evidenced by cathodoluminescence studiesHidalgo Alcalde, PedroMéndez Martín, María BianchiPiqueras De Noriega, Francisco JavierDutta, P.S.Diéguez, E.538.9Liquid-Phase EpitaxyGallium AntimonideDoped GasbGrowthFísica de materialesThe effect of aluminium on the defect structure of GaSb crystals, grown by the vertical Bridgman technique, has been investigated by cathodoluminescence (CL) in the scanning electron microscope. Crystals have been found to be highly homogeneous along the growth axis with the exception of the top end which showed Al accumulation. The CL results show decoration of extended defects by Al but contrary to the case of other dopants Al has not been found to cause a significative reduction of native accepters. A CL band at about 850 meV appears to be related to the presence of aluminium.Pergamon-Elsevier Science LTDUniversidad Complutense de Madrid19981998-01-0119981998-01-01journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/58956reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/589562026-06-02T12:44:21Z
dc.title.none.fl_str_mv Decoration of extended defects in GaSb by Al doping as evidenced by cathodoluminescence studies
title Decoration of extended defects in GaSb by Al doping as evidenced by cathodoluminescence studies
spellingShingle Decoration of extended defects in GaSb by Al doping as evidenced by cathodoluminescence studies
Hidalgo Alcalde, Pedro
538.9
Liquid-Phase Epitaxy
Gallium Antimonide
Doped Gasb
Growth
Física de materiales
title_short Decoration of extended defects in GaSb by Al doping as evidenced by cathodoluminescence studies
title_full Decoration of extended defects in GaSb by Al doping as evidenced by cathodoluminescence studies
title_fullStr Decoration of extended defects in GaSb by Al doping as evidenced by cathodoluminescence studies
title_full_unstemmed Decoration of extended defects in GaSb by Al doping as evidenced by cathodoluminescence studies
title_sort Decoration of extended defects in GaSb by Al doping as evidenced by cathodoluminescence studies
dc.creator.none.fl_str_mv Hidalgo Alcalde, Pedro
Méndez Martín, María Bianchi
Piqueras De Noriega, Francisco Javier
Dutta, P.S.
Diéguez, E.
author Hidalgo Alcalde, Pedro
author_facet Hidalgo Alcalde, Pedro
Méndez Martín, María Bianchi
Piqueras De Noriega, Francisco Javier
Dutta, P.S.
Diéguez, E.
author_role author
author2 Méndez Martín, María Bianchi
Piqueras De Noriega, Francisco Javier
Dutta, P.S.
Diéguez, E.
author2_role author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 538.9
Liquid-Phase Epitaxy
Gallium Antimonide
Doped Gasb
Growth
Física de materiales
topic 538.9
Liquid-Phase Epitaxy
Gallium Antimonide
Doped Gasb
Growth
Física de materiales
description The effect of aluminium on the defect structure of GaSb crystals, grown by the vertical Bridgman technique, has been investigated by cathodoluminescence (CL) in the scanning electron microscope. Crystals have been found to be highly homogeneous along the growth axis with the exception of the top end which showed Al accumulation. The CL results show decoration of extended defects by Al but contrary to the case of other dopants Al has not been found to cause a significative reduction of native accepters. A CL band at about 850 meV appears to be related to the presence of aluminium.
publishDate 1998
dc.date.none.fl_str_mv 1998
1998-01-01
1998
1998-01-01
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/58956
url https://hdl.handle.net/20.500.14352/58956
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Pergamon-Elsevier Science LTD
publisher.none.fl_str_mv Pergamon-Elsevier Science LTD
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,300724

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