Readout schemes for low noise single-photon avalanche diodes fabricated in conventional HV-CMOS technologies

Three different pixels based on single-photon avalanche diodes for triggered applications, such as fluorescence lifetime measurements and high energy physics experiments, are presented. Each pixel consists of a 20µm x 100µm (width x length) single photon avalanche diode and a monolithically integrat...

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Detalles Bibliográficos
Autores: Vilella Figueras, Eva, Diéguez Barrientos, Àngel
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2013
País:España
Institución:Universidad de Barcelona
Repositorio:Dipòsit Digital de la UB
OAI Identifier:oai:diposit.ub.edu:2445/34042
Acceso en línea:https://hdl.handle.net/2445/34042
Access Level:acceso abierto
Palabra clave:Microelectrònica
Detectors de radiació
Metall-òxid-semiconductors complementaris
Optoelectrònica
Col·lisions (Física nuclear)
Microelectronics
Nuclear counters
Complementary metal oxide semiconductors
Optoelectronics
Collisions (Nuclear physics)
id ES_3dfefc2d4bd018cd4375c33379259b4f
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network_name_str España
repository_id_str
spelling Readout schemes for low noise single-photon avalanche diodes fabricated in conventional HV-CMOS technologiesVilella Figueras, EvaDiéguez Barrientos, ÀngelMicroelectrònicaDetectors de radiacióMetall-òxid-semiconductors complementarisOptoelectrònicaCol·lisions (Física nuclear)MicroelectronicsNuclear countersComplementary metal oxide semiconductorsOptoelectronicsCollisions (Nuclear physics)Three different pixels based on single-photon avalanche diodes for triggered applications, such as fluorescence lifetime measurements and high energy physics experiments, are presented. Each pixel consists of a 20µm x 100µm (width x length) single photon avalanche diode and a monolithically integrated readout circuit. The sensors are operated in the gated mode of acquisition to reduce the probability to detect noise counts interferring with real radiation events. Each pixel includes a different readout circuit that allows to use low reverse bias overvoltages. Experimental results demonstrate that the three pixels present a similar behaviour. The pixels get rid of afterpulses and present a reduced dark count probability by applying the gated operation. Noise figures are further improved by using low reverse bias overvoltages. The detectors exhibit an input dynamic range of 13.35 bits with short gated"on" periods of 10ns and a reverse bias overvoltage of 0.5V. The three pixels have been fabricated in a standard HV-CMOS process.Elsevier B.V.2013info:eu-repo/semantics/articleinfo:eu-repo/semantics/acceptedVersionapplication/pdfhttps://hdl.handle.net/2445/34042Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)reponame:Dipòsit Digital de la UBinstname:Universidad de BarcelonaInglésVersió postprint del document publicat a: http://dx.doi.org/10.1016/j.mejo.2013.01.008Microelectronics Journal, 2013http://dx.doi.org/10.1016/j.mejo.2013.01.008(c) Elsevier B.V., 2013info:eu-repo/semantics/openAccessoai:diposit.ub.edu:2445/340422026-05-27T06:46:51Z
dc.title.none.fl_str_mv Readout schemes for low noise single-photon avalanche diodes fabricated in conventional HV-CMOS technologies
title Readout schemes for low noise single-photon avalanche diodes fabricated in conventional HV-CMOS technologies
spellingShingle Readout schemes for low noise single-photon avalanche diodes fabricated in conventional HV-CMOS technologies
Vilella Figueras, Eva
Microelectrònica
Detectors de radiació
Metall-òxid-semiconductors complementaris
Optoelectrònica
Col·lisions (Física nuclear)
Microelectronics
Nuclear counters
Complementary metal oxide semiconductors
Optoelectronics
Collisions (Nuclear physics)
title_short Readout schemes for low noise single-photon avalanche diodes fabricated in conventional HV-CMOS technologies
title_full Readout schemes for low noise single-photon avalanche diodes fabricated in conventional HV-CMOS technologies
title_fullStr Readout schemes for low noise single-photon avalanche diodes fabricated in conventional HV-CMOS technologies
title_full_unstemmed Readout schemes for low noise single-photon avalanche diodes fabricated in conventional HV-CMOS technologies
title_sort Readout schemes for low noise single-photon avalanche diodes fabricated in conventional HV-CMOS technologies
dc.creator.none.fl_str_mv Vilella Figueras, Eva
Diéguez Barrientos, Àngel
author Vilella Figueras, Eva
author_facet Vilella Figueras, Eva
Diéguez Barrientos, Àngel
author_role author
author2 Diéguez Barrientos, Àngel
author2_role author
dc.subject.none.fl_str_mv Microelectrònica
Detectors de radiació
Metall-òxid-semiconductors complementaris
Optoelectrònica
Col·lisions (Física nuclear)
Microelectronics
Nuclear counters
Complementary metal oxide semiconductors
Optoelectronics
Collisions (Nuclear physics)
topic Microelectrònica
Detectors de radiació
Metall-òxid-semiconductors complementaris
Optoelectrònica
Col·lisions (Física nuclear)
Microelectronics
Nuclear counters
Complementary metal oxide semiconductors
Optoelectronics
Collisions (Nuclear physics)
description Three different pixels based on single-photon avalanche diodes for triggered applications, such as fluorescence lifetime measurements and high energy physics experiments, are presented. Each pixel consists of a 20µm x 100µm (width x length) single photon avalanche diode and a monolithically integrated readout circuit. The sensors are operated in the gated mode of acquisition to reduce the probability to detect noise counts interferring with real radiation events. Each pixel includes a different readout circuit that allows to use low reverse bias overvoltages. Experimental results demonstrate that the three pixels present a similar behaviour. The pixels get rid of afterpulses and present a reduced dark count probability by applying the gated operation. Noise figures are further improved by using low reverse bias overvoltages. The detectors exhibit an input dynamic range of 13.35 bits with short gated"on" periods of 10ns and a reverse bias overvoltage of 0.5V. The three pixels have been fabricated in a standard HV-CMOS process.
publishDate 2013
dc.date.none.fl_str_mv 2013
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/34042
url https://hdl.handle.net/2445/34042
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.mejo.2013.01.008
Microelectronics Journal, 2013
http://dx.doi.org/10.1016/j.mejo.2013.01.008
dc.rights.none.fl_str_mv (c) Elsevier B.V., 2013
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) Elsevier B.V., 2013
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier B.V.
publisher.none.fl_str_mv Elsevier B.V.
dc.source.none.fl_str_mv Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
reponame:Dipòsit Digital de la UB
instname:Universidad de Barcelona
instname_str Universidad de Barcelona
reponame_str Dipòsit Digital de la UB
collection Dipòsit Digital de la UB
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869406482724814848
score 15,300719

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