Low-light Challenges in a PFM Digital Pixel Sensor: Leakage and Quantization

This paper presents a comprehensive analysis and simulation of reset leakage currents and quantization errors in pulse frequency modulation (PFM) digital pixel sensors (DPS). The literature has reported these sensors for both visible and infrared applications with high dynamic range (HDR) imaging an...

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Detalles Bibliográficos
Autores: Palomeque Mangut, Sergio, Leñero Bardallo, Juan Antonio, Fernández Peramo, Pablo, Rodríguez Vázquez, Ángel Benito
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2025
País:España
Institución:Universidad de Sevilla (US)
Repositorio:idUS. Depósito de Investigación de la Universidad de Sevilla
OAI Identifier:oai:idus.us.es:11441/177388
Acceso en línea:https://hdl.handle.net/11441/177388
https://doi.org/10.1016/j.aeue.2025.155917
Access Level:acceso abierto
Palabra clave:Digital pixel sensor (DPS)
Pulse frequency modulation (PFM)
Leakage
Readout integrated circuit (ROIC)
Digital pixel ROIC (DPROIC)
CMOS image sensor (CIS)
id ES_3cc8a90ec91078c827bad5f540b22ea4
oai_identifier_str oai:idus.us.es:11441/177388
network_acronym_str ES
network_name_str España
repository_id_str
spelling Low-light Challenges in a PFM Digital Pixel Sensor: Leakage and QuantizationPalomeque Mangut, SergioLeñero Bardallo, Juan AntonioFernández Peramo, PabloRodríguez Vázquez, Ángel BenitoDigital pixel sensor (DPS)Pulse frequency modulation (PFM)LeakageReadout integrated circuit (ROIC)Digital pixel ROIC (DPROIC)CMOS image sensor (CIS)This paper presents a comprehensive analysis and simulation of reset leakage currents and quantization errors in pulse frequency modulation (PFM) digital pixel sensors (DPS). The literature has reported these sensors for both visible and infrared applications with high dynamic range (HDR) imaging and low-power requirements. The work investigates the benefits of using an NMOS reset switch in mitigating leakage currents, particularly in low-light conditions, where PMOS reset implementations often fail to sustain proper photocurrent integration. By characterizing leakage mechanisms, including subthreshold, gate-induced drain leakage, and reverse-bias junction currents, we derive their influence on photogenerated charge integration and propose methods to optimize pixel design for enhanced sensitivity. Furthermore, quantization error caused by residual charge and leakage is analyzed, highlighting their impact on dynamic range and performance. We validate the theoretical insight with simulation results from an advanced CMOS technology, demonstrating improved low-light performance and reduced error using the NMOS reset. These findings provide a framework for designing high-performance PFM pixels for future imaging applications.ElsevierElectrónica y ElectromagnetismoEuropean Union (UE)Ministerio de Ciencia, Innovación y Universidades (MICIU). EspañaEuropean Commission (EC). Fondo Europeo de Desarrollo Regional (FEDER)2025info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfapplication/pdfhttps://hdl.handle.net/11441/177388https://doi.org/10.1016/j.aeue.2025.155917reponame:idUS. Depósito de Investigación de la Universidad de Sevillainstname:Universidad de Sevilla (US)InglésAEU - International Journal of Electronics and Communications, 200, 155917.TSI-069100-2023-001PID2023-147244OB-I00https://doi.org/10.1016/j.aeue.2025.155917info:eu-repo/semantics/openAccessoai:idus.us.es:11441/1773882026-06-17T12:51:07Z
dc.title.none.fl_str_mv Low-light Challenges in a PFM Digital Pixel Sensor: Leakage and Quantization
title Low-light Challenges in a PFM Digital Pixel Sensor: Leakage and Quantization
spellingShingle Low-light Challenges in a PFM Digital Pixel Sensor: Leakage and Quantization
Palomeque Mangut, Sergio
Digital pixel sensor (DPS)
Pulse frequency modulation (PFM)
Leakage
Readout integrated circuit (ROIC)
Digital pixel ROIC (DPROIC)
CMOS image sensor (CIS)
title_short Low-light Challenges in a PFM Digital Pixel Sensor: Leakage and Quantization
title_full Low-light Challenges in a PFM Digital Pixel Sensor: Leakage and Quantization
title_fullStr Low-light Challenges in a PFM Digital Pixel Sensor: Leakage and Quantization
title_full_unstemmed Low-light Challenges in a PFM Digital Pixel Sensor: Leakage and Quantization
title_sort Low-light Challenges in a PFM Digital Pixel Sensor: Leakage and Quantization
dc.creator.none.fl_str_mv Palomeque Mangut, Sergio
Leñero Bardallo, Juan Antonio
Fernández Peramo, Pablo
Rodríguez Vázquez, Ángel Benito
author Palomeque Mangut, Sergio
author_facet Palomeque Mangut, Sergio
Leñero Bardallo, Juan Antonio
Fernández Peramo, Pablo
Rodríguez Vázquez, Ángel Benito
author_role author
author2 Leñero Bardallo, Juan Antonio
Fernández Peramo, Pablo
Rodríguez Vázquez, Ángel Benito
author2_role author
author
author
dc.contributor.none.fl_str_mv Electrónica y Electromagnetismo
European Union (UE)
Ministerio de Ciencia, Innovación y Universidades (MICIU). España
European Commission (EC). Fondo Europeo de Desarrollo Regional (FEDER)
dc.subject.none.fl_str_mv Digital pixel sensor (DPS)
Pulse frequency modulation (PFM)
Leakage
Readout integrated circuit (ROIC)
Digital pixel ROIC (DPROIC)
CMOS image sensor (CIS)
topic Digital pixel sensor (DPS)
Pulse frequency modulation (PFM)
Leakage
Readout integrated circuit (ROIC)
Digital pixel ROIC (DPROIC)
CMOS image sensor (CIS)
description This paper presents a comprehensive analysis and simulation of reset leakage currents and quantization errors in pulse frequency modulation (PFM) digital pixel sensors (DPS). The literature has reported these sensors for both visible and infrared applications with high dynamic range (HDR) imaging and low-power requirements. The work investigates the benefits of using an NMOS reset switch in mitigating leakage currents, particularly in low-light conditions, where PMOS reset implementations often fail to sustain proper photocurrent integration. By characterizing leakage mechanisms, including subthreshold, gate-induced drain leakage, and reverse-bias junction currents, we derive their influence on photogenerated charge integration and propose methods to optimize pixel design for enhanced sensitivity. Furthermore, quantization error caused by residual charge and leakage is analyzed, highlighting their impact on dynamic range and performance. We validate the theoretical insight with simulation results from an advanced CMOS technology, demonstrating improved low-light performance and reduced error using the NMOS reset. These findings provide a framework for designing high-performance PFM pixels for future imaging applications.
publishDate 2025
dc.date.none.fl_str_mv 2025
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/11441/177388
https://doi.org/10.1016/j.aeue.2025.155917
url https://hdl.handle.net/11441/177388
https://doi.org/10.1016/j.aeue.2025.155917
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv AEU - International Journal of Electronics and Communications, 200, 155917.
TSI-069100-2023-001
PID2023-147244OB-I00
https://doi.org/10.1016/j.aeue.2025.155917
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:idUS. Depósito de Investigación de la Universidad de Sevilla
instname:Universidad de Sevilla (US)
instname_str Universidad de Sevilla (US)
reponame_str idUS. Depósito de Investigación de la Universidad de Sevilla
collection idUS. Depósito de Investigación de la Universidad de Sevilla
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869406398210637824
score 15,81155

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