Optical emission from SiO2-embedded silicon nanocrystals: a high pressure Raman and photoluminescence study

We investigate the optical properties of high-quality Si nanocrystals (NCs)/SiO2 multilayers under high hydrostatic pressure with Raman scattering and photoluminescence (PL) measurements. The aim of our study is to shed light on the origin of the optical emission of the Si NCs/SiO2. The Si NCs were...

Descripción completa

Detalles Bibliográficos
Autores: Ibáñez i Insa, Jordi, Hernández Márquez, Sergi, López Vidrier, Julià, Hiller, Daniel, Gutsch, Sebastian, Zacharias, Margit, Segura, A., Valenta, Jan, Garrido Fernández, Blas
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2015
País:España
Institución:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Repositorio:Recercat. Dipósit de la Recerca de Catalunya
OAI Identifier:oai:recercat.cat:2445/124837
Acceso en línea:https://hdl.handle.net/2445/124837
Access Level:acceso abierto
Palabra clave:Nanocristalls
Propietats òptiques
Nanocrystals
Optical properties
id ES_3c901cd09b62cc887d31a6dbebccc8ec
oai_identifier_str oai:recercat.cat:2445/124837
network_acronym_str ES
network_name_str España
repository_id_str
spelling Optical emission from SiO2-embedded silicon nanocrystals: a high pressure Raman and photoluminescence studyIbáñez i Insa, JordiHernández Márquez, SergiLópez Vidrier, JuliàHiller, DanielGutsch, SebastianZacharias, MargitSegura, A.Valenta, JanGarrido Fernández, BlasNanocristallsPropietats òptiquesNanocrystalsOptical propertiesWe investigate the optical properties of high-quality Si nanocrystals (NCs)/SiO2 multilayers under high hydrostatic pressure with Raman scattering and photoluminescence (PL) measurements. The aim of our study is to shed light on the origin of the optical emission of the Si NCs/SiO2. The Si NCs were produced by chemical-vapor deposition of Si-rich oxynitride (SRON)/SiO2 multilayers with 5- and 4-nm SRON layer thicknesses on fused silica substrates and subsequent annealing at 1150 °C, which resulted in the precipitation of Si NCswith an average size of 4.1 and 3.3 nm, respectively. From the pressure dependence of the Raman spectra we extract a phonon pressure coefficient of 8.5 ± 0.3 cm−1/GPa in both samples, notably higher than that of bulk Si (5.1 cm−1/GPa). This result is ascribed to a strong pressure amplification effect due to the larger compressibility of the SiO2 matrix. In turn, the PL spectra exhibit two markedly different contributions: a higher-energy band that redshifts with pressure, and a lower-energy band which barely depends on pressure and which can be attributed to defect-related emission. The pressure coefficients of the higher-energy contribution are (−27 ± 6) and (−35 ± 8) meV/GPa for the Si NCs with a size of 4.1 and 3.3 nm, respectively. These values are sizably higher than those of bulk Si (−14 meV/GPa). When the pressure amplification effect observed by Raman scattering is incorporated into the analysis of the PL spectra, it can be concluded that the pressure behavior of the high-energy PL band is consistent with that of the indirect transition of Si and, therefore, with the quantum-confined model for the emission of the Si NCs.American Physical Society2018201820152018info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersion7 p.application/pdfhttps://hdl.handle.net/2445/124837Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)reponame:Recercat. Dipósit de la Recerca de Catalunyainstname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)InglésReproducció del document publicat a: https://doi.org/10.1103/PhysRevB.92.035432Physical Review B, 2015, vol. 92, num. 3, p. 035432https://doi.org/10.1103/PhysRevB.92.035432(c) American Physical Society, 2015info:eu-repo/semantics/openAccessoai:recercat.cat:2445/1248372026-05-29T05:05:01Z
dc.title.none.fl_str_mv Optical emission from SiO2-embedded silicon nanocrystals: a high pressure Raman and photoluminescence study
title Optical emission from SiO2-embedded silicon nanocrystals: a high pressure Raman and photoluminescence study
spellingShingle Optical emission from SiO2-embedded silicon nanocrystals: a high pressure Raman and photoluminescence study
Ibáñez i Insa, Jordi
Nanocristalls
Propietats òptiques
Nanocrystals
Optical properties
title_short Optical emission from SiO2-embedded silicon nanocrystals: a high pressure Raman and photoluminescence study
title_full Optical emission from SiO2-embedded silicon nanocrystals: a high pressure Raman and photoluminescence study
title_fullStr Optical emission from SiO2-embedded silicon nanocrystals: a high pressure Raman and photoluminescence study
title_full_unstemmed Optical emission from SiO2-embedded silicon nanocrystals: a high pressure Raman and photoluminescence study
title_sort Optical emission from SiO2-embedded silicon nanocrystals: a high pressure Raman and photoluminescence study
dc.creator.none.fl_str_mv Ibáñez i Insa, Jordi
Hernández Márquez, Sergi
López Vidrier, Julià
Hiller, Daniel
Gutsch, Sebastian
Zacharias, Margit
Segura, A.
Valenta, Jan
Garrido Fernández, Blas
author Ibáñez i Insa, Jordi
author_facet Ibáñez i Insa, Jordi
Hernández Márquez, Sergi
López Vidrier, Julià
Hiller, Daniel
Gutsch, Sebastian
Zacharias, Margit
Segura, A.
Valenta, Jan
Garrido Fernández, Blas
author_role author
author2 Hernández Márquez, Sergi
López Vidrier, Julià
Hiller, Daniel
Gutsch, Sebastian
Zacharias, Margit
Segura, A.
Valenta, Jan
Garrido Fernández, Blas
author2_role author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Nanocristalls
Propietats òptiques
Nanocrystals
Optical properties
topic Nanocristalls
Propietats òptiques
Nanocrystals
Optical properties
description We investigate the optical properties of high-quality Si nanocrystals (NCs)/SiO2 multilayers under high hydrostatic pressure with Raman scattering and photoluminescence (PL) measurements. The aim of our study is to shed light on the origin of the optical emission of the Si NCs/SiO2. The Si NCs were produced by chemical-vapor deposition of Si-rich oxynitride (SRON)/SiO2 multilayers with 5- and 4-nm SRON layer thicknesses on fused silica substrates and subsequent annealing at 1150 °C, which resulted in the precipitation of Si NCswith an average size of 4.1 and 3.3 nm, respectively. From the pressure dependence of the Raman spectra we extract a phonon pressure coefficient of 8.5 ± 0.3 cm−1/GPa in both samples, notably higher than that of bulk Si (5.1 cm−1/GPa). This result is ascribed to a strong pressure amplification effect due to the larger compressibility of the SiO2 matrix. In turn, the PL spectra exhibit two markedly different contributions: a higher-energy band that redshifts with pressure, and a lower-energy band which barely depends on pressure and which can be attributed to defect-related emission. The pressure coefficients of the higher-energy contribution are (−27 ± 6) and (−35 ± 8) meV/GPa for the Si NCs with a size of 4.1 and 3.3 nm, respectively. These values are sizably higher than those of bulk Si (−14 meV/GPa). When the pressure amplification effect observed by Raman scattering is incorporated into the analysis of the PL spectra, it can be concluded that the pressure behavior of the high-energy PL band is consistent with that of the indirect transition of Si and, therefore, with the quantum-confined model for the emission of the Si NCs.
publishDate 2015
dc.date.none.fl_str_mv 2015
2018
2018
2018
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/124837
url https://hdl.handle.net/2445/124837
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Reproducció del document publicat a: https://doi.org/10.1103/PhysRevB.92.035432
Physical Review B, 2015, vol. 92, num. 3, p. 035432
https://doi.org/10.1103/PhysRevB.92.035432
dc.rights.none.fl_str_mv (c) American Physical Society, 2015
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) American Physical Society, 2015
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 7 p.
application/pdf
dc.publisher.none.fl_str_mv American Physical Society
publisher.none.fl_str_mv American Physical Society
dc.source.none.fl_str_mv Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
reponame:Recercat. Dipósit de la Recerca de Catalunya
instname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
instname_str Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
reponame_str Recercat. Dipósit de la Recerca de Catalunya
collection Recercat. Dipósit de la Recerca de Catalunya
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869406383651160064
score 15.81155

Similares en LA Referencia