Growth and luminescence of polytypic InP on epitaxial graphene

Van der Waals epitaxy is an attractive alternative to direct heteroepitaxy where the forced coherency at the interface cannot sustain large differences in lattice parameters and thermal expansion coefficients between the substrate and the epilayer. Herein, the growth of monocrystalline InP on Ge and...

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Authors: Mukherjee, Samik|||0000-0002-5279-1110, Nateghi, Nima, Jacobberger, Robert M., Bouthillier, Etienne, De La Mata, Maria|||0000-0002-1581-4838, Arbiol i Cobos, Jordi|||0000-0002-0695-1726, Coenen, Toon, Cardinal, Dhan, Levesque, Pierre, Desjardins, Patrick, Martel, Richard|||0000-0002-9021-4656, Arnold, Michael S., Moutanabbir, Oussama|||0000-0002-0721-3696
Format: article
Publication Date:2018
Country:España
Institution:Universitat Autònoma de Barcelona
Repository:Dipòsit Digital de Documents de la UAB
Language:English
OAI Identifier:oai:ddd.uab.cat:215001
Online Access:https://ddd.uab.cat/record/215001
https://dx.doi.org/urn:doi:10.1002/adfm.201705592
Access Level:Open access
Keyword:Optical emission
Polytypic crystal phase
Van der Waals heteroepitaxy
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spelling Growth and luminescence of polytypic InP on epitaxial grapheneMukherjee, Samik|||0000-0002-5279-1110Nateghi, NimaJacobberger, Robert M.Bouthillier, EtienneDe La Mata, Maria|||0000-0002-1581-4838Arbiol i Cobos, Jordi|||0000-0002-0695-1726Coenen, ToonCardinal, DhanLevesque, PierreDesjardins, PatrickMartel, Richard|||0000-0002-9021-4656Arnold, Michael S.Moutanabbir, Oussama|||0000-0002-0721-3696Optical emissionPolytypic crystal phaseVan der Waals heteroepitaxyVan der Waals epitaxy is an attractive alternative to direct heteroepitaxy where the forced coherency at the interface cannot sustain large differences in lattice parameters and thermal expansion coefficients between the substrate and the epilayer. Herein, the growth of monocrystalline InP on Ge and SiO/Si substrates using graphene as an interfacial layer is demonstrated. Micrometer-sized InP crystals are found to grow with interfaces of high crystalline quality and with different degrees of coalescence depending on the growth conditions. Some InP crystals exhibit a polytypic structure, consisting of alternating zinc-blende and wurtzite phases, forming a type-II homojunction with well (barrier) width of about 10 nm. The optical properties, investigated using room temperature nano-cathodoluminescence, indicate the signatures of the direct optical transitions at 1.34 eV across the gap of the zinc-blende phase and the indirect transitions at ≈1.31 eV originating from the alternating zinc-blende and wurtzite phases. Additionally, the InP nanorods, found growing mainly on the graphene/SiO/Si substrate, show optical transition across the gap of the wurtzite phase at ≈1.42 eV. This demonstration of InP growth on graphene and the correlative study between the structure and optical properties pave the way to develop hybrid structures for potential applications in integrated photonic and optoelectronic devices. 22018-01-0120182018-01-01Articlehttp://purl.org/coar/resource_type/c_6501SMURhttp://purl.org/coar/version/c_71e4c1898caa6e32info:eu-repo/semantics/articleapplication/pdfhttps://ddd.uab.cat/record/215001https://dx.doi.org/urn:doi:10.1002/adfm.201705592reponame:Dipòsit Digital de Documents de la UABinstname:Universitat Autònoma de BarcelonaInglésengAgència de Gestió d'Ajuts Universitaris i de Recerca https://doi.org/10.13039/501100003030 2014/SGR-1638Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 MAT2014-59961-C2-2-RMinisterio de Economía y Competitividad https://doi.org/10.13039/501100003329 SEV-2013-0295open accesshttp://purl.org/coar/access_right/c_abf2Aquest material està protegit per drets d'autor i/o drets afins. Podeu utilitzar aquest material en funció del que permet la legislació de drets d'autor i drets afins d'aplicació al vostre cas. Per a d'altres usos heu d'obtenir permís del(s) titular(s) de drets.https://rightsstatements.org/vocab/InC/1.0/info:eu-repo/semantics/openAccessoai:ddd.uab.cat:2150012026-06-06T12:50:31Z
dc.title.none.fl_str_mv Growth and luminescence of polytypic InP on epitaxial graphene
title Growth and luminescence of polytypic InP on epitaxial graphene
spellingShingle Growth and luminescence of polytypic InP on epitaxial graphene
Mukherjee, Samik|||0000-0002-5279-1110
Optical emission
Polytypic crystal phase
Van der Waals heteroepitaxy
title_short Growth and luminescence of polytypic InP on epitaxial graphene
title_full Growth and luminescence of polytypic InP on epitaxial graphene
title_fullStr Growth and luminescence of polytypic InP on epitaxial graphene
title_full_unstemmed Growth and luminescence of polytypic InP on epitaxial graphene
title_sort Growth and luminescence of polytypic InP on epitaxial graphene
dc.creator.none.fl_str_mv Mukherjee, Samik|||0000-0002-5279-1110
Nateghi, Nima
Jacobberger, Robert M.
Bouthillier, Etienne
De La Mata, Maria|||0000-0002-1581-4838
Arbiol i Cobos, Jordi|||0000-0002-0695-1726
Coenen, Toon
Cardinal, Dhan
Levesque, Pierre
Desjardins, Patrick
Martel, Richard|||0000-0002-9021-4656
Arnold, Michael S.
Moutanabbir, Oussama|||0000-0002-0721-3696
author Mukherjee, Samik|||0000-0002-5279-1110
author_facet Mukherjee, Samik|||0000-0002-5279-1110
Nateghi, Nima
Jacobberger, Robert M.
Bouthillier, Etienne
De La Mata, Maria|||0000-0002-1581-4838
Arbiol i Cobos, Jordi|||0000-0002-0695-1726
Coenen, Toon
Cardinal, Dhan
Levesque, Pierre
Desjardins, Patrick
Martel, Richard|||0000-0002-9021-4656
Arnold, Michael S.
Moutanabbir, Oussama|||0000-0002-0721-3696
author_role author
author2 Nateghi, Nima
Jacobberger, Robert M.
Bouthillier, Etienne
De La Mata, Maria|||0000-0002-1581-4838
Arbiol i Cobos, Jordi|||0000-0002-0695-1726
Coenen, Toon
Cardinal, Dhan
Levesque, Pierre
Desjardins, Patrick
Martel, Richard|||0000-0002-9021-4656
Arnold, Michael S.
Moutanabbir, Oussama|||0000-0002-0721-3696
author2_role author
author
author
author
author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Optical emission
Polytypic crystal phase
Van der Waals heteroepitaxy
topic Optical emission
Polytypic crystal phase
Van der Waals heteroepitaxy
description Van der Waals epitaxy is an attractive alternative to direct heteroepitaxy where the forced coherency at the interface cannot sustain large differences in lattice parameters and thermal expansion coefficients between the substrate and the epilayer. Herein, the growth of monocrystalline InP on Ge and SiO/Si substrates using graphene as an interfacial layer is demonstrated. Micrometer-sized InP crystals are found to grow with interfaces of high crystalline quality and with different degrees of coalescence depending on the growth conditions. Some InP crystals exhibit a polytypic structure, consisting of alternating zinc-blende and wurtzite phases, forming a type-II homojunction with well (barrier) width of about 10 nm. The optical properties, investigated using room temperature nano-cathodoluminescence, indicate the signatures of the direct optical transitions at 1.34 eV across the gap of the zinc-blende phase and the indirect transitions at ≈1.31 eV originating from the alternating zinc-blende and wurtzite phases. Additionally, the InP nanorods, found growing mainly on the graphene/SiO/Si substrate, show optical transition across the gap of the wurtzite phase at ≈1.42 eV. This demonstration of InP growth on graphene and the correlative study between the structure and optical properties pave the way to develop hybrid structures for potential applications in integrated photonic and optoelectronic devices.
publishDate 2018
dc.date.none.fl_str_mv 2
2018-01-01
2018
2018-01-01
dc.type.none.fl_str_mv Article
http://purl.org/coar/resource_type/c_6501
SMUR
http://purl.org/coar/version/c_71e4c1898caa6e32
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://ddd.uab.cat/record/215001
https://dx.doi.org/urn:doi:10.1002/adfm.201705592
url https://ddd.uab.cat/record/215001
https://dx.doi.org/urn:doi:10.1002/adfm.201705592
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.relation.none.fl_str_mv Agència de Gestió d'Ajuts Universitaris i de Recerca https://doi.org/10.13039/501100003030 2014/SGR-1638
Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 MAT2014-59961-C2-2-R
Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 SEV-2013-0295
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://rightsstatements.org/vocab/InC/1.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://rightsstatements.org/vocab/InC/1.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Dipòsit Digital de Documents de la UAB
instname:Universitat Autònoma de Barcelona
instname_str Universitat Autònoma de Barcelona
reponame_str Dipòsit Digital de Documents de la UAB
collection Dipòsit Digital de Documents de la UAB
repository.name.fl_str_mv
repository.mail.fl_str_mv
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