Atomistic understanding of ductile-to-brittle transition in single crystal Si and GaAs under nanoscratch
Ensuring ductile removal in a grinding process is crucial for achieving the desired finish on a hard and brittle single crystal. This study provides new insights into the material removal processes in Si and GaAs single crystals, exploring their deformation behaviour using Berkovich and Conical tips...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2024 |
| País: | España |
| Institución: | Basque Center for Applied Mathematics (BCAM) |
| Repositorio: | BIRD. BCAM's Institutional Repository Data |
| OAI Identifier: | oai:bird.bcamath.org:20.500.11824/1942 |
| Acceso en línea: | http://hdl.handle.net/20.500.11824/1942 |
| Access Level: | acceso embargado |
| Palabra clave: | Cracking Critical depth of cut Ductile-to-brittle transition Molecular dynamic simulation Nanoscratch Single crystal |
| Sumario: | Ensuring ductile removal in a grinding process is crucial for achieving the desired finish on a hard and brittle single crystal. This study provides new insights into the material removal processes in Si and GaAs single crystals, exploring their deformation behaviour using Berkovich and Conical tips to replicate contact from a fixed abrasive grit. Experimental observations are compared with Molecular Dynamic (MD) simulations to uncover the atomistic deformation mechanisms during the ductile-to-brittle transition (DBT). Notable plastic deformation and minimal cracking were consistently observed in Si, irrespective of the tips used. MD simulations supported this observation, revealing pronounced chip formation indicative of ductile material removal. The resistance to cracking in Si was attributed to amorphization induced by localized high contact stresses. In contrast, GaAs showed a propensity for cracking, with MD simulations revealing dislocation and slip band formation, and cracks emerging in the areas of substantial plastic deformation. These findings address phenomena not previously discernible in experimental studies due to the challenge of real-time observation. Moreover, the tip geometry was shown to significantly influence stress distribution, impacting deformation and crack formation in GaAs. This study also reveals limitations in predicting the critical depth for DBT in both Si and GaAs through the amended Bifano, Dow, and Scattergood (aBDS) models and MD simulation, offering nuanced insights into these challenges that have not been extensively explored. It was found that the experimental results exceeded predictions by an order of magnitude. These discrepancies underscore the aBDS model's disregard for essential material properties and tip geometry, while the disparities between MD simulation and experiment are primarily attributed to the inherent limitations in the simulated length scales and challenges in detecting initial subsurface cracks. |
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