100 K uncooled GaAs mesfet amplifier as paramp replacement
The characterisation, design and realisation of a low noise GaAs m.e.s.f.e.t. amplifier to replace a narrow band parametric amplifier at 1.7 GHz is described. Special measurement and analytical techniques are necessary owing to the high reflection coefficients and conditional stability of the transi...
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 1978 |
| País: | España |
| Institución: | Universitat Politècnica de Catalunya (UPC) |
| Repositorio: | UPCommons. Portal del coneixement obert de la UPC |
| Idioma: | inglés |
| OAI Identifier: | oai:upcommons.upc.edu:2117/88814 |
| Acceso en línea: | https://hdl.handle.net/2117/88814 https://dx.doi.org/10.1049/el:19780255 |
| Access Level: | acceso abierto |
| Palabra clave: | Microwaves Field effect transistor circuits Microwave parametric amplifiers Solid-state microwave circuits Microones Àrees temàtiques de la UPC::Enginyeria de la telecomunicació |
| Sumario: | The characterisation, design and realisation of a low noise GaAs m.e.s.f.e.t. amplifier to replace a narrow band parametric amplifier at 1.7 GHz is described. Special measurement and analytical techniques are necessary owing to the high reflection coefficients and conditional stability of the transistor, as well as the very low noise figures being measured. A single stage amplifier is realised with a noise figure of 1.25 dB and 13.5 dB associated gain at 1.7 GHz. |
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