Tunable Photodetectors via In Situ Thermal Conversion of TiS3 to TiO2

In two-dimensional materials research, oxidation is usually considered as a common source for the degradation of electronic and optoelectronic devices or even device failure. However, in some cases a controlled oxidation can open the possibility to widely tune the band structure of 2D materials. In...

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Detalles Bibliográficos
Autores: Ghasemi, Foad, Frisenda, Riccardo, Flores, Eduardo, Papadopoulos, Nikos, Biele, Robert, Perez de Lara, David, Van der Zant, Herre S. J., Watanabe, Kenji, Taniguchi, Takashi, D’Agosta, Roberto, Ares, Jose R., Sánchez, Carlos, Ferrer, Isabel J., Castellanos Gómez, Andrés
Tipo de recurso: artículo
Fecha de publicación:2020
País:España
Institución:Universidad del País Vasco
Repositorio:Addi. Archivo Digital para la Docencia y la Investigación
OAI Identifier:oai:addi.ehu.eus:10810/43275
Acceso en línea:http://hdl.handle.net/10810/43275
Access Level:acceso abierto
Palabra clave:2D materials
photodetectors
oxidation
TiS3
TiO2
Raman spectroscopy
DFT GW
Descripción
Sumario:In two-dimensional materials research, oxidation is usually considered as a common source for the degradation of electronic and optoelectronic devices or even device failure. However, in some cases a controlled oxidation can open the possibility to widely tune the band structure of 2D materials. In particular, we demonstrate the controlled oxidation of titanium trisulfide (TiS3), a layered semicon-ductor that has attracted much attention recently thanks to its quasi-1D electronic and optoelectron-ic properties and its direct bandgap of 1.1 eV. Heating TiS3 in air above 300 °C gradually converts it into TiO2, a semiconductor with a wide bandgap of 3.2 eV with applications in photo-electrochemistry and catalysis. In this work, we investigate the controlled thermal oxidation of indi-vidual TiS3 nanoribbons and its influence on the optoelectronic properties of TiS3-based photodetec-tors. We observe a step-wise change in the cut-off wavelength from its pristine value ~1000 nm to 450 nm after subjecting the TiS3 devices to subsequent thermal treatment cycles. Ab-initio and many-body calculations confirm an increase in the bandgap of titanium oxysulfide (TiO2-xSx) when in-creasing the amount of oxygen and reducing the amount of sulfur.