Ion assisted deposition of thin films by substrate tuned radio frequency magnetron sputtering

The substrate tuning technique was applied to a radio frequency magnetron sputtering system to obtain a variable substrate bias without an additional source. The dependence of the substrate bias on the value of the external impedance was studied for different values of chamber pressure, gas composit...

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Detalles Bibliográficos
Autores: Lousa Rodríguez, Arturo, Gimeno, S.
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:1997
País:España
Institución:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Repositorio:Recercat. Dipósit de la Recerca de Catalunya
OAI Identifier:oai:recercat.cat:2445/25053
Acceso en línea:https://hdl.handle.net/2445/25053
Access Level:acceso abierto
Palabra clave:Pel·lícules fines
Radiofreqüència
Ions
Nitrur de bor
Thin films
Radio frequency
Boron nitride
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spelling Ion assisted deposition of thin films by substrate tuned radio frequency magnetron sputteringLousa Rodríguez, ArturoGimeno, S.Pel·lícules finesRadiofreqüènciaIonsNitrur de borThin filmsRadio frequencyIonsBoron nitrideThe substrate tuning technique was applied to a radio frequency magnetron sputtering system to obtain a variable substrate bias without an additional source. The dependence of the substrate bias on the value of the external impedance was studied for different values of chamber pressure, gas composition and rf input power. A qualitative explanation of the results is given, based on a simple model, and the role of the stray capacitance is clearly disclosed. Langmuir probe measurements show that this system allows independent control of the ion flux and the ion energy bombarding the growing film. For an argon flow rate of 2.8 sccm and a radio frequency power of 300 W (intermediate values of the range studied) the ion flux incident on the substrate was 1.3 X 1020-m-2-s-1. The maximum ion energy available in these conditions can be varied in the range 30-150 eV. As a practical application of the technique, BN thin films were deposited under different ion bombardment conditions. An ion energy threshold of about 80 eV was found, below which only the hexagonal phase was present in the films, while for higher energies both hexagonal and cubic phase were present. A cubic content of about 60% was found for an ion energy of 120 V.American Institute of Physics2012201219972012info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersion4 p.application/pdfhttps://hdl.handle.net/2445/25053Articles publicats en revistes (Física Aplicada)reponame:Recercat. Dipósit de la Recerca de Catalunyainstname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)InglésReproducció del document publicat a: http://dx.doi.org/10.1116/1.580477Journal of Vacuum Science Technology A-Vacuum Surfaces and Films, 1997, vol. 15, num. 1, p. 62-66http://dx.doi.org/10.1116/1.580477(c) American Institute of Physics, 1997info:eu-repo/semantics/openAccessoai:recercat.cat:2445/250532026-05-29T05:05:01Z
dc.title.none.fl_str_mv Ion assisted deposition of thin films by substrate tuned radio frequency magnetron sputtering
title Ion assisted deposition of thin films by substrate tuned radio frequency magnetron sputtering
spellingShingle Ion assisted deposition of thin films by substrate tuned radio frequency magnetron sputtering
Lousa Rodríguez, Arturo
Pel·lícules fines
Radiofreqüència
Ions
Nitrur de bor
Thin films
Radio frequency
Ions
Boron nitride
title_short Ion assisted deposition of thin films by substrate tuned radio frequency magnetron sputtering
title_full Ion assisted deposition of thin films by substrate tuned radio frequency magnetron sputtering
title_fullStr Ion assisted deposition of thin films by substrate tuned radio frequency magnetron sputtering
title_full_unstemmed Ion assisted deposition of thin films by substrate tuned radio frequency magnetron sputtering
title_sort Ion assisted deposition of thin films by substrate tuned radio frequency magnetron sputtering
dc.creator.none.fl_str_mv Lousa Rodríguez, Arturo
Gimeno, S.
author Lousa Rodríguez, Arturo
author_facet Lousa Rodríguez, Arturo
Gimeno, S.
author_role author
author2 Gimeno, S.
author2_role author
dc.subject.none.fl_str_mv Pel·lícules fines
Radiofreqüència
Ions
Nitrur de bor
Thin films
Radio frequency
Ions
Boron nitride
topic Pel·lícules fines
Radiofreqüència
Ions
Nitrur de bor
Thin films
Radio frequency
Ions
Boron nitride
description The substrate tuning technique was applied to a radio frequency magnetron sputtering system to obtain a variable substrate bias without an additional source. The dependence of the substrate bias on the value of the external impedance was studied for different values of chamber pressure, gas composition and rf input power. A qualitative explanation of the results is given, based on a simple model, and the role of the stray capacitance is clearly disclosed. Langmuir probe measurements show that this system allows independent control of the ion flux and the ion energy bombarding the growing film. For an argon flow rate of 2.8 sccm and a radio frequency power of 300 W (intermediate values of the range studied) the ion flux incident on the substrate was 1.3 X 1020-m-2-s-1. The maximum ion energy available in these conditions can be varied in the range 30-150 eV. As a practical application of the technique, BN thin films were deposited under different ion bombardment conditions. An ion energy threshold of about 80 eV was found, below which only the hexagonal phase was present in the films, while for higher energies both hexagonal and cubic phase were present. A cubic content of about 60% was found for an ion energy of 120 V.
publishDate 1997
dc.date.none.fl_str_mv 1997
2012
2012
2012
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/25053
url https://hdl.handle.net/2445/25053
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Reproducció del document publicat a: http://dx.doi.org/10.1116/1.580477
Journal of Vacuum Science Technology A-Vacuum Surfaces and Films, 1997, vol. 15, num. 1, p. 62-66
http://dx.doi.org/10.1116/1.580477
dc.rights.none.fl_str_mv (c) American Institute of Physics, 1997
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) American Institute of Physics, 1997
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 4 p.
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv Articles publicats en revistes (Física Aplicada)
reponame:Recercat. Dipósit de la Recerca de Catalunya
instname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
instname_str Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
reponame_str Recercat. Dipósit de la Recerca de Catalunya
collection Recercat. Dipósit de la Recerca de Catalunya
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,811543

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