Frequency Response of MAPbI3 Perovskites for Photodetection Application
[EN] The frequency response of the photocurrent (I-ph) generated in perovskite photodetectors is a crucial issue in imaging or telecommunication applications, although it is briefly discussed in the literature. The present work obtains for the first time the complete expression of the I-ph generated...
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2024 |
| País: | España |
| Institución: | Universitat Politècnica de València (UPV) |
| Repositorio: | RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia |
| Idioma: | inglés |
| OAI Identifier: | oai:riunet.upv.es:10251/208523 |
| Acceso en línea: | https://riunet.upv.es/handle/10251/208523 |
| Access Level: | acceso abierto |
| Palabra clave: | Frequency response MAPbI(3) Photodetector Transimpedance amplifier |
| Sumario: | [EN] The frequency response of the photocurrent (I-ph) generated in perovskite photodetectors is a crucial issue in imaging or telecommunication applications, although it is briefly discussed in the literature. The present work obtains for the first time the complete expression of the I-ph generated on MAPbI(3) (MA:methylamoniumI) perovskite polycrystalline thin films. A conditioning circuit is used to extract I-ph at 1 V of bias voltage under a square-modulated laser excitation with a sensitivity smaller than 1 nW and a linear dynamic range LDR > 200 dB; It allows an accurate determination of the module of I-ph together with the phase, which is not usually reported in photodetector systems. The frequency domain analysis reveals that I-ph can be modeled by two fractional poles located at low (10 kHz) and high (39-250 kHz) cut-off frequencies. Optimum geometrical parameters and excitation fluence are found for the wider response, resulting for the best device on a cut off frequency up to 250 kHz, and the reproduction of square-modulated optical waves up to 100 kHz. These results represent an important strategy toward the electrical analysis of MAPbI(3) (or other perovskite materials) for the design of posterior electronic stages, optimization of devices and determination of their figures of merit. |
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