Influence of epitaxial stress on temperature-dependent ferroelectric endurance of Hf0.5Zr0.5O2 from cryogenic to ambient conditions

Herein, we describe a comparative study of the ferroelectric properties of epitaxial Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> films grown on La<inf>0.67</inf>Sr<inf>0.33</inf>MnO<inf>3</inf>/SrTiO<inf>3</inf> (1...

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Autores: Adkins, Joshua. W., Kumari, Suman, Gage, Thomas, Fina, Ignasi, Sánchez Barrera, Florencio
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2025
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:dnet:digitalcsic_::3a8d34b8b4a89a990823bcce3ec504fd
Acceso en línea:http://hdl.handle.net/10261/431726
https://api.elsevier.com/content/abstract/scopus_id/105014325645
Access Level:acceso abierto
Palabra clave:Epitaxy
Fluorite ferroelectric materials
Pulsed laser deposition
Thin films
Variable-temperature properties
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dc.title.none.fl_str_mv Influence of epitaxial stress on temperature-dependent ferroelectric endurance of Hf0.5Zr0.5O2 from cryogenic to ambient conditions
title Influence of epitaxial stress on temperature-dependent ferroelectric endurance of Hf0.5Zr0.5O2 from cryogenic to ambient conditions
spellingShingle Influence of epitaxial stress on temperature-dependent ferroelectric endurance of Hf0.5Zr0.5O2 from cryogenic to ambient conditions
Adkins, Joshua. W.
Epitaxy
Fluorite ferroelectric materials
Pulsed laser deposition
Thin films
Variable-temperature properties
title_short Influence of epitaxial stress on temperature-dependent ferroelectric endurance of Hf0.5Zr0.5O2 from cryogenic to ambient conditions
title_full Influence of epitaxial stress on temperature-dependent ferroelectric endurance of Hf0.5Zr0.5O2 from cryogenic to ambient conditions
title_fullStr Influence of epitaxial stress on temperature-dependent ferroelectric endurance of Hf0.5Zr0.5O2 from cryogenic to ambient conditions
title_full_unstemmed Influence of epitaxial stress on temperature-dependent ferroelectric endurance of Hf0.5Zr0.5O2 from cryogenic to ambient conditions
title_sort Influence of epitaxial stress on temperature-dependent ferroelectric endurance of Hf0.5Zr0.5O2 from cryogenic to ambient conditions
dc.creator.none.fl_str_mv Adkins, Joshua. W.
Kumari, Suman
Gage, Thomas
Fina, Ignasi
Sánchez Barrera, Florencio
author Adkins, Joshua. W.
author_facet Adkins, Joshua. W.
Kumari, Suman
Gage, Thomas
Fina, Ignasi
Sánchez Barrera, Florencio
author_role author
author2 Kumari, Suman
Gage, Thomas
Fina, Ignasi
Sánchez Barrera, Florencio
author2_role author
author
author
author
dc.contributor.none.fl_str_mv University of Illinois
Ministerio de Ciencia, Innovación y Universidades (España)
Ministerio de Ciencia e Innovación (España)
Agencia Estatal de Investigación (España)
Generalitat de Catalunya
Department of Energy (US)
Adkins, Joshua. W. [0000-0002-5770-3597]
Kumari, Suman [0000-0002-3109-2847]
Gage, Thomas [0000-0001-5090-8410]
Fina, Ignasi [0000-0003-4182-6194]
Sánchez Barrera, Florencio [0000-0002-5314-453X]
dc.subject.none.fl_str_mv Epitaxy
Fluorite ferroelectric materials
Pulsed laser deposition
Thin films
Variable-temperature properties
topic Epitaxy
Fluorite ferroelectric materials
Pulsed laser deposition
Thin films
Variable-temperature properties
description Herein, we describe a comparative study of the ferroelectric properties of epitaxial Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> films grown on La<inf>0.67</inf>Sr<inf>0.33</inf>MnO<inf>3</inf>/SrTiO<inf>3</inf> (100) and La<inf>0.67</inf>Sr<inf>0.33</inf>MnO<inf>3</inf>/DyScO<inf>3</inf> (110) across a temperature range of 32-298 K for the purpose of assessing the influence of epitaxial stress on material behavior. Despite the nearly 300% greater in-plane strain in the LSMO layer on DSO (110) than STO (100), strain in the HZO layer was minimal. The absence of strain propagation into the HZO film via LSMO is the result of domain matching epitaxy, in which the conventional strain induced by differences in the lattice parameters of HZO and LSMO is compensated and minimized by the generation of periodic integer multiples of HZO and LSMO planes matched along the interface of the two materials. However, epitaxial stress present during growth modifies the stability of the orthorhombic and monoclinic phases in the films, and produces differences in observed variable-temperature ferroelectric behavior. The HZO film grown on LSMO-buffered DSO (110) exhibits 20% greater remanent polarization than its LSMO-buffered STO (100) counterpart due to its enhanced orthorhombic phase volume and also experiences a smaller polarization-based wake up effect. The defect migration-mediated variable-temperature wake-up characteristics of both films, which manifest as pinched hysteresis loops at low temperatures, are comparable. Slight differences in the variable-temperature fatigue characteristics of the films suggest subtle electronic dissimilarities between HZO/LSMO/STO (100) and HZO/LSMO/DSO (110), which can also be explained by slight differences in domain pinning behavior due to differences in polar phase volume present in these films. Our findings provide insight into the influence of epitaxial stress on the behavior of HZO, which should prove useful for researchers aiming to utilize mismatch strain-based methods of introducing structural modifications for enhanced functionality and understanding material behavior in epitaxial HZO films.
publishDate 2025
dc.date.none.fl_str_mv 2025
2026
2026
dc.type.none.fl_str_mv info:eu-repo/semantics/article
Publisher's version
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/431726
https://api.elsevier.com/content/abstract/scopus_id/105014325645
url http://hdl.handle.net/10261/431726
https://api.elsevier.com/content/abstract/scopus_id/105014325645
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Jphys Materials
http://doi.org/10.1088/2515-7639/adfb31
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dc.publisher.none.fl_str_mv Institute of Physics Publishing
publisher.none.fl_str_mv Institute of Physics Publishing
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instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
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spelling Influence of epitaxial stress on temperature-dependent ferroelectric endurance of Hf0.5Zr0.5O2 from cryogenic to ambient conditionsAdkins, Joshua. W.Kumari, SumanGage, ThomasFina, IgnasiSánchez Barrera, FlorencioEpitaxyFluorite ferroelectric materialsPulsed laser depositionThin filmsVariable-temperature propertiesHerein, we describe a comparative study of the ferroelectric properties of epitaxial Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> films grown on La<inf>0.67</inf>Sr<inf>0.33</inf>MnO<inf>3</inf>/SrTiO<inf>3</inf> (100) and La<inf>0.67</inf>Sr<inf>0.33</inf>MnO<inf>3</inf>/DyScO<inf>3</inf> (110) across a temperature range of 32-298 K for the purpose of assessing the influence of epitaxial stress on material behavior. Despite the nearly 300% greater in-plane strain in the LSMO layer on DSO (110) than STO (100), strain in the HZO layer was minimal. The absence of strain propagation into the HZO film via LSMO is the result of domain matching epitaxy, in which the conventional strain induced by differences in the lattice parameters of HZO and LSMO is compensated and minimized by the generation of periodic integer multiples of HZO and LSMO planes matched along the interface of the two materials. However, epitaxial stress present during growth modifies the stability of the orthorhombic and monoclinic phases in the films, and produces differences in observed variable-temperature ferroelectric behavior. The HZO film grown on LSMO-buffered DSO (110) exhibits 20% greater remanent polarization than its LSMO-buffered STO (100) counterpart due to its enhanced orthorhombic phase volume and also experiences a smaller polarization-based wake up effect. The defect migration-mediated variable-temperature wake-up characteristics of both films, which manifest as pinched hysteresis loops at low temperatures, are comparable. Slight differences in the variable-temperature fatigue characteristics of the films suggest subtle electronic dissimilarities between HZO/LSMO/STO (100) and HZO/LSMO/DSO (110), which can also be explained by slight differences in domain pinning behavior due to differences in polar phase volume present in these films. Our findings provide insight into the influence of epitaxial stress on the behavior of HZO, which should prove useful for researchers aiming to utilize mismatch strain-based methods of introducing structural modifications for enhanced functionality and understanding material behavior in epitaxial HZO films.J W Adkins acknowledges financial support from the University of Illinois Chicago Bridge to Faculty program. Grants PID2023-147211OB-C21, Severo Ochoa (CEX2023-001263-S), PDC2023-145 874-I00, PID2020-112548RB-I00, TED2021-130453B-C21 and PID2019-107727RB-I00 funded by MCIN/AEI/ 10.13039/501 100 011 033 and grant 2021 SGR 00804 funded by Generalitat de Catalunya are acknowledged. Electronic measurements at Argonne National Laboratory were supported by the US. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division. The use of the Center for Nanoscale Materials (CNM) for transmission electron microscopy was supported by the US. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. X-ray diffraction was conducted using instrumentation provided by the University of Illinois Chicago Research Resources Center and the UIC College of Engineering’s Nanotechnology Core Facility. Transmission electron microscopy was conducted at Argonne National Laboratory’s CNM.With funding from the Spanish government through the ‘Severo Ochoa Centre of Excellence’ accreditation (CEX2023-001263-S).Peer reviewedInstitute of Physics PublishingUniversity of IllinoisMinisterio de Ciencia, Innovación y Universidades (España)Ministerio de Ciencia e Innovación (España)Agencia Estatal de Investigación (España)Generalitat de CatalunyaDepartment of Energy (US)Adkins, Joshua. W. [0000-0002-5770-3597]Kumari, Suman [0000-0002-3109-2847]Gage, Thomas [0000-0001-5090-8410]Fina, Ignasi [0000-0003-4182-6194]Sánchez Barrera, Florencio [0000-0002-5314-453X]202620262025info:eu-repo/semantics/articlePublisher's versioninfo:eu-repo/semantics/publishedVersionhttp://hdl.handle.net/10261/431726https://api.elsevier.com/content/abstract/scopus_id/105014325645reponame:DIGITAL.CSIC. 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