Insight into spin transport in oxide heterostructures from interface-resolved magnetic mapping.

At interfaces between complex oxides, electronic, orbital and magnetic reconstructions may produce states of matter absent from the materials involved, offering novel possibilities for electronic and spintronic devices. Here we show that magnetic reconstruction has a strong influence on the interfac...

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Detalles Bibliográficos
Autores: Bruno, Flavio Yair, Grisolia, M. N., Visani, C., Varela Del Arco, María, Valencia, S., Aburdan, R., Tornos, J., Rivera Calzada, Alberto Carlos, Ünal, A. A., Pennycook, S. J., Sefrioui, Zouhair, León Yebra, Carlos, Villegas, J. E., Santamaría Sánchez-Barriga, Jacobo, Barthélémy, A., Bibes, M.
Tipo de recurso: artículo
Fecha de publicación:2015
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/24362
Acceso en línea:https://hdl.handle.net/20.500.14352/24362
Access Level:acceso abierto
Palabra clave:537
Manganite tunnel-junctions
Magnetoresistance
Electronics
Films
Física (Física)
22 Física
Descripción
Sumario:At interfaces between complex oxides, electronic, orbital and magnetic reconstructions may produce states of matter absent from the materials involved, offering novel possibilities for electronic and spintronic devices. Here we show that magnetic reconstruction has a strong influence on the interfacial spin selectivity, a key parameter controlling spin transport in magnetic tunnel junctions. In epitaxial heterostructures combining layers of antiferromagnetic LaFeO_3 (LFO) and ferromagnetic La_0.7Sr_0.3MnO_3 (LSMO), we find that a net magnetic moment is induced in the first few unit planes of LFO near the interface with LSMO. Using X-ray photoemission electron microscopy, we show that the ferromagnetic domain structure of the manganite electrodes is imprinted into the antiferromagnetic tunnel barrier, endowing it with spin selectivity. Finally, we find that the spin arrangement resulting from coexisting ferromagnetic and antiferromagnetic interactions strongly influences the tunnel magnetoresistance of LSMO/LFO/LSMO junctions through competing spin-polarization and spin-filtering effects.

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