Role of Defects on the Particle Size–Capacitance Relationship of Zn–Co Mixed Metal Oxide Supported on Heteroatom-Doped Graphenes as Supercapacitors

Supercapacitors are considered among the most promising electrical energy storage devices, there being a need to achieve the highest possible energy storage density. Herein small mixed Zn–Co metal oxide nanoparticles are grown on doped graphene (O-, N- and, B-doped graphenes). The electrochemical pr...

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Detalles Bibliográficos
Autores: Hu, Jiajun, Peng, Y., Albero, J., García Gómez, Hermenegildo
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2022
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/296516
Acceso en línea:http://hdl.handle.net/10261/296516
Access Level:acceso abierto
Descripción
Sumario:Supercapacitors are considered among the most promising electrical energy storage devices, there being a need to achieve the highest possible energy storage density. Herein small mixed Zn–Co metal oxide nanoparticles are grown on doped graphene (O-, N- and, B-doped graphenes). The electrochemical properties of the resulting mixed Zn–Co metal oxide nanoparticles (4 nm) grown on B-doped graphene exhibit an outstanding specific capacitance of 2568 F g at 2 A g, ranking this B-doped graphene composite among the best performing electrodes. The energy storage capacity is also remarkable even at large current densities (i.e., 640 F g at 40 A g). In contrast, larger nanoparticles are obtained using N- and O-doped graphenes as support, the resulting materials exhibiting lower performance. Besides energy storage, the Zn–Co oxide on B-doped graphene shows notable electrochemical performance and stability obtaining a maximum energy density of 77.6 W h Kg at 850 W Kg, a power density of 8500 W Kg at 28.3 W h Kg, and a capacitance retention higher than 85% after 5000 cycles. The smaller nanoparticle size and improved electrochemical performance on B-doped graphene-based devices are attributed to the higher defect density and nature of the dopant element on graphene.