NH₃ molecular doping of silicon nanowires grown along the [112], [110], [001], and [111] orientations
The possibility that an adsorbed molecule could provide shallow electronic states that could be thermally excited has received less attention than substitutional impurities and could potentially have a high impact in the doping of silicon nanowires (SiNWs). We show that molecular-based ex-situ dopin...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2012 |
| País: | España |
| Institución: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:ddd.uab.cat:184838 |
| Acceso en línea: | https://ddd.uab.cat/record/184838 https://dx.doi.org/urn:doi:10.1186/1556-276X-7-308 |
| Access Level: | acceso abierto |
| Palabra clave: | Silicon nanowires Ammonia Molecular doping DFT Electronic properties Gas sensing |
| Sumario: | The possibility that an adsorbed molecule could provide shallow electronic states that could be thermally excited has received less attention than substitutional impurities and could potentially have a high impact in the doping of silicon nanowires (SiNWs). We show that molecular-based ex-situ doping, where NH₃ is adsorbed at the sidewall of the SiNW, can be an alternative path to n-type doping. By means of first-principle electronic structure calculations, we show that NH₃ is a shallow donor regardless of the growth orientation of the SiNWs. Also, we discuss quantum confinement and its relation with the depth of the NH₃ doping state, showing that the widening of the bandgap makes the molecular donor level deeper, thus more difficult to activate. |
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