Moiré-enabled topological superconductivity in twisted bilayer graphene
Twisted van der Waals materials have risen as highly tunable platforms for realizing unconventional superconductivity. Here we demonstrate how a topological superconducting state can be driven in a twisted graphene multilayer at a twist angle of approximately 1.6 degrees proximitized to other 2D mat...
| Authors: | , , |
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| Format: | article |
| Status: | Published version |
| Publication Date: | 2024 |
| Country: | España |
| Institution: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repository: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/383745 |
| Online Access: | http://hdl.handle.net/10261/383745 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85191245569&doi=10.1088%2f2053-1583%2fad3b0c&partnerID=40&md5=c23ddd3376fc5c72b15e7a14ade92f0f |
| Access Level: | Open access |
| Keyword: | topological superconductivity twisted bilayer graphene van der Waals heterostructures |
| Summary: | Twisted van der Waals materials have risen as highly tunable platforms for realizing unconventional superconductivity. Here we demonstrate how a topological superconducting state can be driven in a twisted graphene multilayer at a twist angle of approximately 1.6 degrees proximitized to other 2D materials. We show that an encapsulated twisted bilayer subject to induced Rashba spin-orbit coupling, s-wave superconductivity, and exchange field generates a topological superconducting state enabled by the moiré pattern. We demonstrate the emergence of a variety of topological states with different Chern numbers, that are highly tunable through doping, strain, and bias voltage. Our proposal does not depend on fine-tuning the twist angle, but solely on the emergence of moiré minibands and is applicable for twist angles between 1.3 and 3 degrees. Our results establish the potential of twisted graphene bilayers to create topological superconductivity without requiring ultraflat dispersions. © 2024 The Author(s). Published by IOP Publishing Ltd. |
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