Analytical expressions for the transport coefficients of icosahedral quasicrystals
We investigate by analytical means the electronic transport properties of approximants and quasicrystals. The spectral resistivity is modeled by Lorentz functions in agreement with realistic ab initio calculations (linear muffin-tin orbital basis, Kubo-Greenwood formula) for low-order approximants....
| Autores: | , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2003 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/52115 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/52115 |
| Access Level: | acceso abierto |
| Palabra clave: | 538.9 Al-Cu-Fe Metal-insulator-transition Density-of-states Quasi-crystals Electronic-structure Band-structure Electrical-conductivity Anderson transition Thin-films Pd-Re Física de materiales Física del estado sólido 2211 Física del Estado Sólido |
| Sumario: | We investigate by analytical means the electronic transport properties of approximants and quasicrystals. The spectral resistivity is modeled by Lorentz functions in agreement with realistic ab initio calculations (linear muffin-tin orbital basis, Kubo-Greenwood formula) for low-order approximants. The analytical expressions for the transport coefficients compare well with both numerical calculations and experiments. Thus, the temperature-dependent conductivity, thermopower, electronic thermal conductivity, and Lorenz number of certain approximants and quasicrystals can be consistently explained. |
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