2D MoS2 under switching field conditions: Study of high-frequency noise velocity fluctuations

The transient high-frequency noise response of two-dimensional MoS2 under abrupt large signal switching field conditions is studied by means of an ensemble Monte Carlo simulator. Low-to-high and high-to-low transitions are analyzed at low (77 K) and room temperature, considering several underlying s...

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Detalles Bibliográficos
Autores: Iglesias Pérez, José Manuel, Pascual Corral, Elena, García Sánchez, Sergio, Rengel Estévez, Raúl
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2023
País:España
Institución:Universidad de Salamanca (USAL)
Repositorio:GREDOS. Repositorio Institucional de la Universidad de Salamanca
OAI Identifier:oai:gredos.usal.es:10366/154553
Acceso en línea:http://hdl.handle.net/10366/154553
Access Level:acceso abierto
Palabra clave:Electronic transport
Semiconductors
Electronic noise
Signal processing
Elementary particle interactions
Stochastic processes
1208.08 Procesos Estocásticos
2211.25 Semiconductores
2203.06 Transporte de Electrones
id ES_307eb3d95ecceedafe2911cea90fc2ac
oai_identifier_str oai:gredos.usal.es:10366/154553
network_acronym_str ES
network_name_str España
repository_id_str
spelling 2D MoS2 under switching field conditions: Study of high-frequency noise velocity fluctuationsIglesias Pérez, José ManuelPascual Corral, ElenaGarcía Sánchez, SergioRengel Estévez, RaúlElectronic transportSemiconductorsElectronic noiseSignal processingElementary particle interactionsStochastic processes1208.08 Procesos Estocásticos2211.25 Semiconductores2203.06 Transporte de ElectronesThe transient high-frequency noise response of two-dimensional MoS2 under abrupt large signal switching field conditions is studied by means of an ensemble Monte Carlo simulator. Low-to-high and high-to-low transitions are analyzed at low (77 K) and room temperature, considering several underlying substrates. The incorporation of stochastic individual scattering events allows capturing the transient collective phonon-electron coupling, which is shown to be responsible for the appearance of an oscillatory behaviour in the average velocity and energy at low temperature in the case of MoS2 on SiO2, hBN and Al2O3. Activation and deactivation of surface polar phonon emissions in the low-to-high field switching process yield to the appearance of a relevant peak in the power spectral density of velocity fluctuations in the THz range. The results show the important influence of the substrate type in the noise behaviour of MoS2 at very high frequencies, which is critical for the design of future FET devices based on 2D TMD technology.202420242023info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfhttp://hdl.handle.net/10366/154553reponame:GREDOS. Repositorio Institucional de la Universidad de Salamancainstname:Universidad de Salamanca (USAL)Inglésinfo:eu-repo/semantics/openAccessoai:gredos.usal.es:10366/1545532026-06-07T06:28:51Z
dc.title.none.fl_str_mv 2D MoS2 under switching field conditions: Study of high-frequency noise velocity fluctuations
title 2D MoS2 under switching field conditions: Study of high-frequency noise velocity fluctuations
spellingShingle 2D MoS2 under switching field conditions: Study of high-frequency noise velocity fluctuations
Iglesias Pérez, José Manuel
Electronic transport
Semiconductors
Electronic noise
Signal processing
Elementary particle interactions
Stochastic processes
1208.08 Procesos Estocásticos
2211.25 Semiconductores
2203.06 Transporte de Electrones
title_short 2D MoS2 under switching field conditions: Study of high-frequency noise velocity fluctuations
title_full 2D MoS2 under switching field conditions: Study of high-frequency noise velocity fluctuations
title_fullStr 2D MoS2 under switching field conditions: Study of high-frequency noise velocity fluctuations
title_full_unstemmed 2D MoS2 under switching field conditions: Study of high-frequency noise velocity fluctuations
title_sort 2D MoS2 under switching field conditions: Study of high-frequency noise velocity fluctuations
dc.creator.none.fl_str_mv Iglesias Pérez, José Manuel
Pascual Corral, Elena
García Sánchez, Sergio
Rengel Estévez, Raúl
author Iglesias Pérez, José Manuel
author_facet Iglesias Pérez, José Manuel
Pascual Corral, Elena
García Sánchez, Sergio
Rengel Estévez, Raúl
author_role author
author2 Pascual Corral, Elena
García Sánchez, Sergio
Rengel Estévez, Raúl
author2_role author
author
author
dc.subject.none.fl_str_mv Electronic transport
Semiconductors
Electronic noise
Signal processing
Elementary particle interactions
Stochastic processes
1208.08 Procesos Estocásticos
2211.25 Semiconductores
2203.06 Transporte de Electrones
topic Electronic transport
Semiconductors
Electronic noise
Signal processing
Elementary particle interactions
Stochastic processes
1208.08 Procesos Estocásticos
2211.25 Semiconductores
2203.06 Transporte de Electrones
description The transient high-frequency noise response of two-dimensional MoS2 under abrupt large signal switching field conditions is studied by means of an ensemble Monte Carlo simulator. Low-to-high and high-to-low transitions are analyzed at low (77 K) and room temperature, considering several underlying substrates. The incorporation of stochastic individual scattering events allows capturing the transient collective phonon-electron coupling, which is shown to be responsible for the appearance of an oscillatory behaviour in the average velocity and energy at low temperature in the case of MoS2 on SiO2, hBN and Al2O3. Activation and deactivation of surface polar phonon emissions in the low-to-high field switching process yield to the appearance of a relevant peak in the power spectral density of velocity fluctuations in the THz range. The results show the important influence of the substrate type in the noise behaviour of MoS2 at very high frequencies, which is critical for the design of future FET devices based on 2D TMD technology.
publishDate 2023
dc.date.none.fl_str_mv 2023
2024
2024
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10366/154553
url http://hdl.handle.net/10366/154553
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:GREDOS. Repositorio Institucional de la Universidad de Salamanca
instname:Universidad de Salamanca (USAL)
instname_str Universidad de Salamanca (USAL)
reponame_str GREDOS. Repositorio Institucional de la Universidad de Salamanca
collection GREDOS. Repositorio Institucional de la Universidad de Salamanca
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869405549338034176
score 15.300724

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