Metal-Controlled Magnetoresistance at Room Temperature in Single-Molecule Devices

The appropriate choice of the transition metal complex and metal surface electronic structure opens the possibility to control the spin of the charge carriers through the resulting hybrid molecule/metal spinterface in a single molecule electrical contact at room temperature. The single molecule cond...

Descripción completa

Detalles Bibliográficos
Autores: Aragonès, Albert C., Aravena Ponce, Daniel Alejandro, Valverde-Muñoz, Francisco J., Real, José Antonio, Sanz Carrasco, Fausto, Díez Pérez, Ismael, Ruiz Sabín, Eliseo
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2017
País:España
Institución:Universidad de Barcelona
Repositorio:Dipòsit Digital de la UB
OAI Identifier:oai:diposit.ub.edu:2445/154758
Acceso en línea:https://hdl.handle.net/2445/154758
Access Level:acceso abierto
Palabra clave:Magnetoresistència
Teoria del funcional de densitat
Espintrònica
Magnetoresistance
Density functionals
Spintronics
id ES_2ffcc0a1ed51333d8b4e95c9d8622f2e
oai_identifier_str oai:diposit.ub.edu:2445/154758
network_acronym_str ES
network_name_str España
repository_id_str
spelling Metal-Controlled Magnetoresistance at Room Temperature in Single-Molecule DevicesAragonès, Albert C.Aravena Ponce, Daniel AlejandroValverde-Muñoz, Francisco J.Real, José AntonioSanz Carrasco, FaustoDíez Pérez, IsmaelRuiz Sabín, EliseoMagnetoresistènciaTeoria del funcional de densitatEspintrònicaMagnetoresistanceDensity functionalsSpintronicsThe appropriate choice of the transition metal complex and metal surface electronic structure opens the possibility to control the spin of the charge carriers through the resulting hybrid molecule/metal spinterface in a single molecule electrical contact at room temperature. The single molecule conductance of a Au/molecule/Ni junction can be switched by flipping the magnetization direction of the ferromagnetic electrode. The requirements of the molecule include not just the presence of unpaired electrons: the electronic configuration of the metal center has to provide occupied or empty orbitals that strongly interact with the junction metal electrodes and that are close in energy to their Fermi levels for one of the electronic spins only. The key ingredient for the metal surface is to provide an efficient spin texture induced by the spin orbit coupling in the topological surface states that results in an efficient spin-dependent interaction with the orbitals of the molecule. The strong magnetoresistance effect found in this kind of single-molecule wire opens a new approach for the design of room-temperature nanoscale devices based on spin-polarized currents controlled at molecular level.American Chemical Society2017info:eu-repo/semantics/articleinfo:eu-repo/semantics/acceptedVersionapplication/pdfhttps://hdl.handle.net/2445/154758Articles publicats en revistes (Química Inorgànica i Orgànica)reponame:Dipòsit Digital de la UBinstname:Universidad de BarcelonaInglésVersió postprint del document publicat a: https://doi.org/10.1021/jacs.6b11166Journal of the American Chemical Society, 2017, vol. 139, num. 16, p. 5768-5778https://doi.org/10.1021/jacs.6b11166(c) American Chemical Society , 2017info:eu-repo/semantics/openAccessoai:diposit.ub.edu:2445/1547582026-05-27T06:46:51Z
dc.title.none.fl_str_mv Metal-Controlled Magnetoresistance at Room Temperature in Single-Molecule Devices
title Metal-Controlled Magnetoresistance at Room Temperature in Single-Molecule Devices
spellingShingle Metal-Controlled Magnetoresistance at Room Temperature in Single-Molecule Devices
Aragonès, Albert C.
Magnetoresistència
Teoria del funcional de densitat
Espintrònica
Magnetoresistance
Density functionals
Spintronics
title_short Metal-Controlled Magnetoresistance at Room Temperature in Single-Molecule Devices
title_full Metal-Controlled Magnetoresistance at Room Temperature in Single-Molecule Devices
title_fullStr Metal-Controlled Magnetoresistance at Room Temperature in Single-Molecule Devices
title_full_unstemmed Metal-Controlled Magnetoresistance at Room Temperature in Single-Molecule Devices
title_sort Metal-Controlled Magnetoresistance at Room Temperature in Single-Molecule Devices
dc.creator.none.fl_str_mv Aragonès, Albert C.
Aravena Ponce, Daniel Alejandro
Valverde-Muñoz, Francisco J.
Real, José Antonio
Sanz Carrasco, Fausto
Díez Pérez, Ismael
Ruiz Sabín, Eliseo
author Aragonès, Albert C.
author_facet Aragonès, Albert C.
Aravena Ponce, Daniel Alejandro
Valverde-Muñoz, Francisco J.
Real, José Antonio
Sanz Carrasco, Fausto
Díez Pérez, Ismael
Ruiz Sabín, Eliseo
author_role author
author2 Aravena Ponce, Daniel Alejandro
Valverde-Muñoz, Francisco J.
Real, José Antonio
Sanz Carrasco, Fausto
Díez Pérez, Ismael
Ruiz Sabín, Eliseo
author2_role author
author
author
author
author
author
dc.subject.none.fl_str_mv Magnetoresistència
Teoria del funcional de densitat
Espintrònica
Magnetoresistance
Density functionals
Spintronics
topic Magnetoresistència
Teoria del funcional de densitat
Espintrònica
Magnetoresistance
Density functionals
Spintronics
description The appropriate choice of the transition metal complex and metal surface electronic structure opens the possibility to control the spin of the charge carriers through the resulting hybrid molecule/metal spinterface in a single molecule electrical contact at room temperature. The single molecule conductance of a Au/molecule/Ni junction can be switched by flipping the magnetization direction of the ferromagnetic electrode. The requirements of the molecule include not just the presence of unpaired electrons: the electronic configuration of the metal center has to provide occupied or empty orbitals that strongly interact with the junction metal electrodes and that are close in energy to their Fermi levels for one of the electronic spins only. The key ingredient for the metal surface is to provide an efficient spin texture induced by the spin orbit coupling in the topological surface states that results in an efficient spin-dependent interaction with the orbitals of the molecule. The strong magnetoresistance effect found in this kind of single-molecule wire opens a new approach for the design of room-temperature nanoscale devices based on spin-polarized currents controlled at molecular level.
publishDate 2017
dc.date.none.fl_str_mv 2017
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/154758
url https://hdl.handle.net/2445/154758
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Versió postprint del document publicat a: https://doi.org/10.1021/jacs.6b11166
Journal of the American Chemical Society, 2017, vol. 139, num. 16, p. 5768-5778
https://doi.org/10.1021/jacs.6b11166
dc.rights.none.fl_str_mv (c) American Chemical Society , 2017
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) American Chemical Society , 2017
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Chemical Society
publisher.none.fl_str_mv American Chemical Society
dc.source.none.fl_str_mv Articles publicats en revistes (Química Inorgànica i Orgànica)
reponame:Dipòsit Digital de la UB
instname:Universidad de Barcelona
instname_str Universidad de Barcelona
reponame_str Dipòsit Digital de la UB
collection Dipòsit Digital de la UB
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869405515405066240
score 15.300724

Similares en LA Referencia