Photoluminescence Imaging and LBIC Characterization of Defects in mc-Si Solar Cells
Today’s photovoltaic market is dominated by multicrystalline silicon (mc-Si) based solar cells with around 70% of worldwide production. In order to improve the quality of the Si material, a proper characterization of the electrical activity in mc-Si solar cells is essential. A full-wafer characteriz...
| Autores: | , , , , , , |
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| Tipo de recurso: | capítulo de libro |
| Fecha de publicación: | 2018 |
| País: | España |
| Institución: | Universidad de Valladolid |
| Repositorio: | UVaDOC. Repositorio Documental de la Universidad de Valladolid |
| OAI Identifier: | oai:uvadoc.uva.es:10324/31321 |
| Acceso en línea: | https://doi.org/10.1007/s11664-018-6381-8 http://uvadoc.uva.es/handle/10324/31321 |
| Access Level: | acceso abierto |
| Palabra clave: | Solar cells multicrystalline silicon UMG silicon LBIC |
| Sumario: | Today’s photovoltaic market is dominated by multicrystalline silicon (mc-Si) based solar cells with around 70% of worldwide production. In order to improve the quality of the Si material, a proper characterization of the electrical activity in mc-Si solar cells is essential. A full-wafer characterization technique such as photoluminescence imaging (PLi) provides a fast inspection of the wafer defects, though at the expense of the spatial resolution. On the other hand, a study of the defects at a microscopic scale can be achieved through the light-beam induced current technique. The combination of these macroscopic and microscopic resolution techniques allows a detailed study of the electrical activity of defects in mc-Si solar cells. In this work, upgraded metallurgical grade Si solar cells are studied using these two techniques. |
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