Epitaxial La0.7Sr0.3MnO3 thin films on silicon with excellent magnetic and electric properties by combining physical and chemical methods

Half-metallic ferromagnetic La0.7Sr0.3MnO3 (LSMO) represents an appealing candidate to be integrated on silicon substrates for technological devices such as sensors, data storage media, IR detectors, and so on. Here, we report high-quality epitaxial LSMO thin films obtained by an original combinatio...

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Autores: Vila-Fungueiriño, José M., Gázquez, Jaume, Magén, César, Saint-Girons, Guillaume, Bachelet, Romain, Carretero Genevrier, Adrian
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2018
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/181028
Acceso en línea:http://hdl.handle.net/10261/181028
Access Level:acceso abierto
Palabra clave:Thin-films
Functional oxides
Silicon integration
Chemical solution deposition
Molecular beam epitaxy
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spelling Epitaxial La0.7Sr0.3MnO3 thin films on silicon with excellent magnetic and electric properties by combining physical and chemical methodsVila-Fungueiriño, José M.Gázquez, JaumeMagén, CésarSaint-Girons, GuillaumeBachelet, RomainCarretero Genevrier, AdrianThin-filmsFunctional oxidesSilicon integrationChemical solution depositionMolecular beam epitaxyHalf-metallic ferromagnetic La0.7Sr0.3MnO3 (LSMO) represents an appealing candidate to be integrated on silicon substrates for technological devices such as sensors, data storage media, IR detectors, and so on. Here, we report high-quality epitaxial LSMO thin films obtained by an original combination of chemical solution deposition (CSD) and molecular beam epitaxy (MBE). A detailed study of the thermal, chemical, and physical compatibility between SrTiO3 (STO)/Si buffer layers and LSMO films, grown by MBE and CSD, respectively, enables a perfect integration of both materials. Importantly, we show a precise control of the coercive field of LSMO films by tuning the mosaicity of the STO/Si buffer layer. These results demonstrate the enormous potential of combining physical and chemical processes for the development of low-cost functional oxide-based devices compatible with the complementary metal oxide semiconductor technology.ACG acknowledges the financial support from the French Agence Nationale pour la Recherche (ANR), project Q-NOSS ANR-16-CE09-0006-01 and École Centrale de Lyon under the BQR 2016 project. The research leading to these results has received funding from the European Union Seventh Framework Program under Grant Agreement 312483 - ESTEEM2 (Integrated Infrastructure Initiative–I3). This project has received funding from the EU‐H2020 research and innovation Program under grant agreement No 654360 having benefitted from the access provided by ICMAB-CSIC in Barcelona within the framework of the NFFA‐Europe Transnational Access Activity. Fruitful discussions with Pr. F. Rivadulla from USC are highly acknowledged. INL authors acknowledge the European Commission for funding the project TIPS (H2020-ICT-02-2014-1-644453). We thank P. Regreny, C. Botella, and J. B. Goure for the MBE technical assistance on the Nanolyon technological platform.Peer reviewedTaylor & FrancisAgence Nationale de la Recherche (France)Ecole Normale Supérieure de LyonEuropean CommissionVila-Fungueiriño, José M. [0000-0002-1839-0495]Magen, Cesar [0000-0002-6761-6171]Bachelet, Romain [0000-0002-2910-0449]Carretero Genevrier, Adrian [0000-0003-0488-9452]Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]201920192018info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionhttp://hdl.handle.net/10261/181028reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/EC/FP7/312483info:eu-repo/grantAgreement/EC/H2020/654360info:eu-repo/grantAgreement/EC/H2020/644453https://doi.org/10.1080/14686996.2018.1520590Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/1810282026-05-22T06:33:51Z
dc.title.none.fl_str_mv Epitaxial La0.7Sr0.3MnO3 thin films on silicon with excellent magnetic and electric properties by combining physical and chemical methods
title Epitaxial La0.7Sr0.3MnO3 thin films on silicon with excellent magnetic and electric properties by combining physical and chemical methods
spellingShingle Epitaxial La0.7Sr0.3MnO3 thin films on silicon with excellent magnetic and electric properties by combining physical and chemical methods
Vila-Fungueiriño, José M.
Thin-films
Functional oxides
Silicon integration
Chemical solution deposition
Molecular beam epitaxy
title_short Epitaxial La0.7Sr0.3MnO3 thin films on silicon with excellent magnetic and electric properties by combining physical and chemical methods
title_full Epitaxial La0.7Sr0.3MnO3 thin films on silicon with excellent magnetic and electric properties by combining physical and chemical methods
title_fullStr Epitaxial La0.7Sr0.3MnO3 thin films on silicon with excellent magnetic and electric properties by combining physical and chemical methods
title_full_unstemmed Epitaxial La0.7Sr0.3MnO3 thin films on silicon with excellent magnetic and electric properties by combining physical and chemical methods
title_sort Epitaxial La0.7Sr0.3MnO3 thin films on silicon with excellent magnetic and electric properties by combining physical and chemical methods
dc.creator.none.fl_str_mv Vila-Fungueiriño, José M.
Gázquez, Jaume
Magén, César
Saint-Girons, Guillaume
Bachelet, Romain
Carretero Genevrier, Adrian
author Vila-Fungueiriño, José M.
author_facet Vila-Fungueiriño, José M.
Gázquez, Jaume
Magén, César
Saint-Girons, Guillaume
Bachelet, Romain
Carretero Genevrier, Adrian
author_role author
author2 Gázquez, Jaume
Magén, César
Saint-Girons, Guillaume
Bachelet, Romain
Carretero Genevrier, Adrian
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Agence Nationale de la Recherche (France)
Ecole Normale Supérieure de Lyon
European Commission
Vila-Fungueiriño, José M. [0000-0002-1839-0495]
Magen, Cesar [0000-0002-6761-6171]
Bachelet, Romain [0000-0002-2910-0449]
Carretero Genevrier, Adrian [0000-0003-0488-9452]
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Thin-films
Functional oxides
Silicon integration
Chemical solution deposition
Molecular beam epitaxy
topic Thin-films
Functional oxides
Silicon integration
Chemical solution deposition
Molecular beam epitaxy
description Half-metallic ferromagnetic La0.7Sr0.3MnO3 (LSMO) represents an appealing candidate to be integrated on silicon substrates for technological devices such as sensors, data storage media, IR detectors, and so on. Here, we report high-quality epitaxial LSMO thin films obtained by an original combination of chemical solution deposition (CSD) and molecular beam epitaxy (MBE). A detailed study of the thermal, chemical, and physical compatibility between SrTiO3 (STO)/Si buffer layers and LSMO films, grown by MBE and CSD, respectively, enables a perfect integration of both materials. Importantly, we show a precise control of the coercive field of LSMO films by tuning the mosaicity of the STO/Si buffer layer. These results demonstrate the enormous potential of combining physical and chemical processes for the development of low-cost functional oxide-based devices compatible with the complementary metal oxide semiconductor technology.
publishDate 2018
dc.date.none.fl_str_mv 2018
2019
2019
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Publisher's version
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/181028
url http://hdl.handle.net/10261/181028
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv #PLACEHOLDER_PARENT_METADATA_VALUE#
#PLACEHOLDER_PARENT_METADATA_VALUE#
#PLACEHOLDER_PARENT_METADATA_VALUE#
info:eu-repo/grantAgreement/EC/FP7/312483
info:eu-repo/grantAgreement/EC/H2020/654360
info:eu-repo/grantAgreement/EC/H2020/644453
https://doi.org/10.1080/14686996.2018.1520590
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv Taylor & Francis
publisher.none.fl_str_mv Taylor & Francis
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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