Electronic stopping of slow protons in oxides: Scaling properties

Electronic stopping of slow protons in ZnO, VO2 (metal and semiconductor phases), HfO2, and Ta2O5 was investigated experimentally. As a comparison of the resulting stopping cross sections (SCS) to data for Al2O3 and SiO2 reveals, electronic stopping of slow protons does not correlate with electronic...

Full description

Bibliographic Details
Authors: Roth, D., Bruckner, B., Undeutsch, G., Paneta, V., Mardare, A. I., McGahan, C. L., Dosmailov, M., Juaristi Oliden, Joseba Iñaki, Alducin Ochoa, Maite, Pedarnig, J. D., Haglund, R. F., Primetzhofer, Daniel, Bauer, P.
Format: article
Status:Published version
Publication Date:2017
Country:España
Institution:Consejo Superior de Investigaciones Científicas (CSIC)
Repository:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/176618
Online Access:http://hdl.handle.net/10261/176618
Access Level:Open access
Description
Summary:Electronic stopping of slow protons in ZnO, VO2 (metal and semiconductor phases), HfO2, and Ta2O5 was investigated experimentally. As a comparison of the resulting stopping cross sections (SCS) to data for Al2O3 and SiO2 reveals, electronic stopping of slow protons does not correlate with electronic properties of the specific material such as band gap energies. Instead, the oxygen 2p states are decisive, as corroborated by density functional theory calculations of the electronic densities of states. Hence, at low ion velocities the SCS of an oxide primarily scales with its oxygen density.

Similar Items