Enhanced Sensitivity of CMOS Image Sensors by Stacked Diodes
We have investigated and compared the performance of photodiodes built with stacked p/n junctions operating in parallel versus conventional ones made with single p/n junctions. We propose a method to characterize and compare photodiodes sensitivity. For this purpose, a dedicated chip in the standard...
| Autores: | , , , |
|---|---|
| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2016 |
| País: | España |
| Institución: | Universidad de Sevilla (US) |
| Repositorio: | idUS. Depósito de Investigación de la Universidad de Sevilla |
| OAI Identifier: | oai:idus.us.es:11441/90615 |
| Acceso en línea: | https://hdl.handle.net/11441/90615 https://doi.org/10.1109/JSEN.2016.2611759 |
| Access Level: | acceso abierto |
| Palabra clave: | Stacked photodiodes Spectral sensitivity Photodiode characterization Event-based vision sensors NIR |
| Sumario: | We have investigated and compared the performance of photodiodes built with stacked p/n junctions operating in parallel versus conventional ones made with single p/n junctions. We propose a method to characterize and compare photodiodes sensitivity. For this purpose, a dedicated chip in the standard AMS 180-nm HV technology has been fabricated. Four different sensor structures were implemented and compared. Experimental results are provided. Measurements show sensitivity enhancement ranging from 55% to 70% within the 500-1100 nm spectral region. The larger increment is happening in the near infrared band (up to 62%). Such results make stacked photodiodes suitable candidates for the implementation of photosensors in vision chips designed for standard CMOS technologies. |
|---|